双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

恩智浦ASLxxxxSHN前照灯评估板

恩智浦的ASLx500SHN和ASLx41xSHN评估板用于驱动6个LED灯串,其中LED灯串电流为150 mA至1.6 A,电压为2 V至60 V。Nexperia发布了众多升压转换器级产品,其中包括采用LFPAK56封装的80 V MOSFET和100 V肖特基整流二极管。该降压转换器采用了80 V DFN2020 MOSFET和54 V TVS二极管。 
 

主要特性与优势

  • 一个四相DC-DC升压转换器和两个三相DC-DC降压转换器
  • 6 LED输出

板上的产品 (11)

Type number Description Status Quick access
PMEG10030ELP-Q 100 V, 3 A low leakage current Schottky barrier rectifier Production
BAS316 High-speed switching diode Production
BUK9M5R2-30E N-channel 30 V, 5.2 mΩ logic level MOSFET in LFPAK33 Production
BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 Production
PDZ6.8B Single Zener diodes Production
PMBT3904 40 V, 200 mA NPN switching transistor Production
PMEG10020ELR 100 V, 2 A low leakage current Schottky barrier rectifier Production
PMEG10030ELP-Q 100 V, 3 A low leakage current Schottky barrier rectifier Production
PMEG10030ELP 100 V, 3 A low leakage current Schottky barrier rectifier Production
PMPB215ENEA 80 V, single N-channel Trench MOSFET Production
PTVS54VS1UTR High-temperature 400 W Transient Voltage Suppressor Production

板上的产品 (11)

Type number Description Status Quick access
PMEG10030ELP-Q 100 V, 3 A low leakage current Schottky barrier rectifier Production
BAS316 High-speed switching diode Production
BUK9M5R2-30E N-channel 30 V, 5.2 mΩ logic level MOSFET in LFPAK33 Production
BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 Production
PDZ6.8B Single Zener diodes Production
PMBT3904 40 V, 200 mA NPN switching transistor Production
PMEG10020ELR 100 V, 2 A low leakage current Schottky barrier rectifier Production
PMEG10030ELP-Q 100 V, 3 A low leakage current Schottky barrier rectifier Production
PMEG10030ELP 100 V, 3 A low leakage current Schottky barrier rectifier Production
PMPB215ENEA 80 V, single N-channel Trench MOSFET Production
PTVS54VS1UTR High-temperature 400 W Transient Voltage Suppressor Production

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