双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

DC/DC Resonant LLC

Higher efficiency, higher power density, and higher component density have become common in power-supply designs and their applications. To achieve both higher switching frequencies and lower switching losses, many designs are turning to half- or full-bridge resonant LLC topologies. By using a resonant LLC tank, this effectively filters out harmonics resulting in low electro-magnetic emissions levels (EMI). It can also enable a high degree of integration in the magnetic parts, enabling the design of converters with higher efficiency and power density.

Block diagram

设计考虑因素

  • 开始采用PWM驱动无刷直流电机控制
  • 电机驱动MOSFET必须以低RDSon和良好的热阻抗来满足峰值高电流需求
  • 如果过载情况会降低电池和栅极电压,则可能需要具有强线性模式性能的MOSFET来提供反向电池保护
  • MOSFET可能需要满足UL2595等的具体间距要求
  • 为小尺寸优化的电荷平衡MOSFET,通常装在可移动电池组中——每个电池一个

MOSFET and GaN FET Handbook

Drawing on over 20 years’ of experience, the MOSFET and GaN FET Application Handbook: A Power Design Engineer’s Guide brings together a comprehensive set of learning and reference materials relating to the use of MOSFETs and GaN FETs in real world systems.

Download your copy today 

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