双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74HC03DB

Quad 2-input NAND gate; open-drain output

The 74HC03; 74HCT03 is a quad 2-input NAND gate with open-drain outputs. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC.

此产品已停产

Alternatives

Features and benefits

  • Wide supply voltage range from 2.0 V to 6.0 V

  • CMOS low power dissipation

  • High noise immunity

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Input levels:

    • For 74HC03: CMOS level

    • For 74HCT03: TTL level

  • Complies with JEDEC standards:

    • JESD8C (2.7 V to 3.6 V)
    • JESD7A (2.0 V to 6.0 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74HC03DB 74HC03DB,112
(935173770112)		 Obsolete no package information
74HC03DB,118
(935173770118)		 Obsolete

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74HC03DB 74HC03DB,112 74HC03DB rohs rhf rhf
74HC03DB 74HC03DB,118 74HC03DB rohs rhf rhf
品质及可靠性免责声明

Series

文档 (3)

文件名称 标题 类型 日期
74HC_HCT03 Quad 2-input NAND gate; open-drain output Data sheet 2024-02-16
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09
HCT_USER_GUIDE HC/T User Guide User manual 1997-10-31

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

No documents available

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册