可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| GANE3R9-150QBA | GANE3R9-150QBAZ | 934667633332 | SOT8091-1 | 订单产品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationGANE3R9-150QBA
150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
The GANE3R9-150QBA is a a general purpose 150 V, 3.9 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance.
Features and benefits
Enhancement mode - normally-off power switch
Ultra high frequency switching capability
No body diode
Low gate charge, low output charge
Qualified for standard applications
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm
Applications
High power density and high efficiency power conversion
AC-to-DC converters, (secondary stage)
High frequency DC-to-DC converters in 48 V systems
Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
Datacom and telecom (AC-to-DC and DC-to-DC) converters
Motor drives
LiDAR (non-automotive)
Class D audio amplifiers
参数类型
| 型号 | Package version | Package name | Product status | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GANE3R9-150QBA | SOT8091-1 | VQFN7 | Production | 1 | 150 | 3.9 | 150 | 3.5 | 65 | 1.1 | 2200 | 900 | 2024-04-22 |
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| GANE3R9-150QBA | GANE3R9-150QBAZ (934667633332) |
Active | 3R9EQBA |
VQFN7 (SOT8091-1) |
SOT8091-1 | SOT8091-1_332 |
文档 (18)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| GANE3R9-150QBA | 150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) | Data sheet | 2024-04-30 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| SOT8091-1 | very thin quad flatpack; no leads | Package information | 2024-05-29 |
| SOT8091-1_332 | VQFN7; Reel dry pack for SMD, 13"; Q2/T3 product orientation | Packing information | 2024-03-28 |
| GANE3R9-150QBA_LTspice | GANE3R9-150QBA LTspice model | SPICE model | 2024-06-25 |
| GANE3R9-150QBA_SIMetrix | GANE3R9-150QBA SIMetrix model | SPICE model | 2024-06-25 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| CauerModel_GANE3R9-150QBA | Cauer model GANE3R9-150QBA | Thermal model | 2024-06-25 |
| FosterModel_GANE3R9-150QBA | Foster model GANE3R9-150QBA | Thermal model | 2024-06-25 |
| GANE3R9-150QBA | GANE3R9-150QBA RC thermal model | Thermal model | 2024-06-25 |
| GANE3R9-150QBA_Cauer | GANE3R9-150QBA Cauer model | Thermal model | 2024-06-25 |
| GANE3R9-150QBA_Foster | GANE3R9-150QBA Foster model | Thermal model | 2024-06-25 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| GANE3R9-150QBA_LTspice | GANE3R9-150QBA LTspice model | SPICE model | 2024-06-25 |
| GANE3R9-150QBA_SIMetrix | GANE3R9-150QBA SIMetrix model | SPICE model | 2024-06-25 |
| CauerModel_GANE3R9-150QBA | Cauer model GANE3R9-150QBA | Thermal model | 2024-06-25 |
| FosterModel_GANE3R9-150QBA | Foster model GANE3R9-150QBA | Thermal model | 2024-06-25 |
| GANE3R9-150QBA | GANE3R9-150QBA RC thermal model | Thermal model | 2024-06-25 |
| GANE3R9-150QBA_Cauer | GANE3R9-150QBA Cauer model | Thermal model | 2024-06-25 |
| GANE3R9-150QBA_Foster | GANE3R9-150QBA Foster model | Thermal model | 2024-06-25 |
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| GANE3R9-150QBA | GANE3R9-150QBAZ | 934667633332 | Active | SOT8091-1_332 | 2,500 | 订单产品 |
样品
作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GANE3R9-150QBA
150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
从安世半导体购买
| SKU | 库存* | MOQ | 单位价格 | 数量 |
|---|