双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN1R6-40YLC

N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

此产品已停产

Features and benefits

  • High reliability Power SO8 package, qualified to 150°C
  • Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
  • Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
  • Ultra low Rdson and low parasitic inductance

Applications

  • DC-to-DC converters
  • Load switching
  • Power OR-ing
  • Server power supplies
  • Sync rectifier

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN1R6-40YLC SOT1023 LFPAK56E; Power-SO8 End of life N 1 40 1.55 1.8 150 100 15.3 59 126 288 62 1.46 N 7790 1063 2012-05-17

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PSMN1R6-40YLC PSMN1R6-40YLC,115
(935296952115)		 Obsolete SOT1023
LFPAK56E; Power-SO8
(SOT1023) 		SOT1023 REFLOW_BG-BD-1
SOT1023_115

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PSMN1R6-40YLC PSMN1R6-40YLC,115 PSMN1R6-40YLC rohs rhf
品质及可靠性免责声明

文档 (20)

文件名称 标题 类型 日期
PSMN1R6-40YLC N-channel 40 V, 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology Data sheet 2018-04-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN90032 Low temperature soldering, application study Application note 2022-02-22
SOT1023 3D model for products with SOT1023 package Design support 2017-06-29
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_SOT1023_mk plastic, single-ended surface-mounted package (LFPAK56); 4 leads; 1.27 mm pitch; 4.58 mm x 5.13 mm x 1.03 mm body Marcom graphics 2017-01-28
SOT1023 plastic, single-ended surface-mounted package (LFPAK56E); 4 leads; 1.27 mm pitch Package information 2024-08-28
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PSMN1R6-40YLC PSMN1R6-40YLC Spice model SPICE model 2012-09-03
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN1R6-40YLC PSMN1R6-40YLC Thermal model Thermal model 2012-09-20

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PSMN1R6-40YLC PSMN1R6-40YLC Spice model SPICE model 2012-09-03
PSMN1R6-40YLC PSMN1R6-40YLC Thermal model Thermal model 2012-09-20
SOT1023 3D model for products with SOT1023 package Design support 2017-06-29

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册