双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN1R9-80SSJ

N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88

In high-power applications, it is common practice to connect two or more MOSFETs in parallel to provide high current capability. Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally.

Small differences in VGS(th) for individual devices cause the MOSFET with the lowest VGS(th) to turn-on first, taking a larger share of the load current during the dynamic switching phase.

The difference in load current between individual MOSFETs ΔID can be significant often leading to differential heating and potential accelerated failure.

One method to reduce the ΔI between MOSFETs is to select devices with matched VGS(th), but testing & sorting MOSFETs with matched VGS(th) can be a difficult process. VGS(th) is typically measured at ΔID < 1 mA and is influenced by temperature also.

ASFETs with enhanced dynamic current sharing are designed to show significantly improved current sharing with low ΔID when connected in parallel applications, they also deliver improved temperature stability showing lower ΔID due to temperature differences across the PCB.

Features and benefits

  • Removes the need for VGS(th) matching

  • Low ΔID enhances current sharing in parallel applications

  • Less sensitive to temperature differences across the PCB

  • Reduced VGS(th) spread

  • Low RDSon

  • 286 A continuous ID Max

  • Avalanche rated, 100% tested

  • Compact and Reliable 8x8 LFPAK88 package, qualified to 175 °C

Applications

  • Applications using MOSFETs in parallel

  • Applications utilizing MOSFETs with matched VGS(th)

  • High-power motor control

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF)
PSMN1R9-80SSJ SOT1235 LFPAK88 Development N 1 80 1.9 175 286 14 253 340 107 2.2 N 21300 2843

文档 (6)

文件名称 标题 类型 日期
PSMN1R9-80SSJ N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88 Data sheet 2024-10-24
SOT1235 3D model for products with SOT1235 package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK88_sot1235_mk plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body Marcom graphics 2019-04-10
SOT1235 plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body Package information 2022-05-30
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
SOT1235 3D model for products with SOT1235 package Design support 2020-01-22

订购、定价与供货

样品

作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册