双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

DC EV charging station

While some drivers can charge their electric vehicles from their own homes, many drivers rely on public charging infrastructure. Although 22 kW AC poles offer the bulk of public charging, DC charging stations are increasingly being used where a short-burst fast charging solution is needed (such as at petrol stations and motorway service stations). Here the conversion takes place in the charging station itself, bypassing the OBC and directly charging (400 V / 800 V) the battery.

Block diagram

Highlighted components are Nexperia focus products

Design considerations

  • DC charging stations rated to 420 V can be covered with 650 V GAN FETs, 800 V systems require 1200 V SiC MOSFETs
  • Need to be able to provide robust and reliable system performance, with high SOA and avalanche capabilties
  • Nexperia GaN FETs are easy to drive, enabling high power density with standard, inexpensive MOSFET drviers
  • CCPAK technology delivers compact design with high efficiency and reliability
  • Increasing interest in bare die desings 

MOSFET and GaN FET Handbook

Drawing on over 20 years’ of experience, the MOSFET and GaN FET Application Handbook: A Power Design Engineer’s Guide brings together a comprehensive set of learning and reference materials relating to the use of MOSFETs and GaN FETs in real world systems.

Download your copy today 

H-bridge motor controller design using Nexperia discrete semiconductors and logic ICs

The H-bridge circuit in this Technical Note is a full bridge DC-to-DC converter allowing operation of a brushed DC motor (48 V max, 12 V min, 5 A max). All electronic functions are designed with Nexperia discrete and logic IC components (low cost, no microcontroller or software needed). Read more >>