双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LVC3GU04GD

Triple unbuffered inverter

The 74LVC3GU04 is a triple unbuffered inverter.

Inputs can be driven from either 3.3 V or 5 V devices. These features allow the use of these devices in a mixed 3.3 V and 5 V environment.

此产品已停产

Alternatives

Features and benefits

  • Wide supply voltage range from 1.65 V to 5.5 V

  • Overvoltage tolerant inputs to 5.5 V

  • High noise immunity

  • ±24 mA output drive at VCC = 3.0 V

  • CMOS low power consumption

  • Latch-up performance exceeds 250 mA

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C.

文档 (3)

文件名称 标题 类型 日期
74LVC3GU04 Triple unbuffered inverter Data sheet 2023-08-29
AN11009 Pin FMEA for LVC family Application note 2019-01-09
lvc3gu04 74LVC3GU04 IBIS model IBIS model 2015-01-15

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
lvc3gu04 74LVC3GU04 IBIS model IBIS model 2015-01-15

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册