双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LVC1G17GW

Single Schmitt trigger buffer

The 74LVC1G17 is a single buffer Schmitt-trigger. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

Alternatives

Features and benefits

  • Wide supply voltage range from 1.65 V to 5.5 V

  • Overvoltage tolerant inputs to 5.5 V

  • High noise immunity

  • CMOS low power dissipation

  • IOFF circuitry provides partial Power-down mode operation

  • ±24 mA output drive (VCC = 3.0 V)

  • Latch-up performance exceeds 250 mA

  • Direct interface with TTL levels

  • Unlimited rise and fall times

  • Complies with JEDEC standard:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

    • JESD36 (4.5 V to 5.5 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

参数类型

型号 VCC (V) Logic switching levels Output drive capability (mA) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C) Package name
74LVC1G17GW 1.65 - 5.5 CMOS/LVTTL ± 32 175 1 low -40~125 TSSOP5

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74LVC1G17GW 74LVC1G17GW,125
(935270079125)		 Active VJ SOT353-1
TSSOP5
(SOT353-1) 		SOT353-1 WAVE_BG-BD-1
SOT353-1_125

Boards

Part number Description Type Quick links Shop link
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package
描述
The NX-HB-GAN039-TSCUL top-side cooled half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high side & low side logic inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 kW or more, dependent upon cooling, ambient temperature and switching frequency. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.
类型
Evaluation board
Quick links
Shop link
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package
描述
The NX-HB-GAN039-BSCUL bottom-side cooled half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high side & low side logic inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 KW or more, dependent upon cooling, ambient temperature and switching frequency. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.
类型
Evaluation board
Quick links
Shop link
NX-HB-GAN111UL half-bridge evaluation board
NX-HB-GAN111UL half-bridge evaluation board
描述
The NX-HB-GAN111UL half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 650V Cascode GaN FETs. The circuit is configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high / low level inputs. The voltage input and output can operate at up to 400 VDC, with a power output > 2000 Watts.
类型
Evaluation board
Quick links
Shop link

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74LVC1G17GW 74LVC1G17GW,125 74LVC1G17GW rohs rhf rhf
品质及可靠性免责声明

Series

文档 (12)

文件名称 标题 类型 日期
74LVC1G17 Single Schmitt trigger buffer Data sheet 2024-09-03
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11009 Pin FMEA for LVC family Application note 2019-01-09
Nexperia_document_guide_MiniLogic_PicoGate_201901 PicoGate leaded logic portfolio guide Brochure 2019-01-07
SOT353-1 3D model for products with SOT353-1 package Design support 2019-09-23
lvc1g17 74LVC1G17 IBIS model IBIS model 2018-05-25
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
TSSOP5_SOT353-1_mk plastic, thin shrink small outline package; 5 leads; 0.65 mm pitch; 2 mm x 1.25 mm x 0.95 mm body Marcom graphics 2018-07-25
SOT353-1 plastic thin shrink small outline package; 5 leads; body width 1.25 mm Package information 2022-11-15
SOT353-1_125 TSSOP5; Reel pack for SMD, 7"; Q3/T4 product orientation Packing information 2023-02-21
74LVC1G17GW_Nexperia_Product_Reliability 74LVC1G17GW Nexperia Product Reliability Quality document 2024-06-16
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
lvc1g17 74LVC1G17 IBIS model IBIS model 2018-05-25
SOT353-1 3D model for products with SOT353-1 package Design support 2019-09-23

PCB Symbol, Footprint and 3D Model

Model Name 描述

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
74LVC1G17GW 74LVC1G17GW,125 935270079125 Active SOT353-1_125 3,000 订单产品

样品

作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
74LVC1G17GW 74LVC1G17GW,125 935270079125 SOT353-1 订单产品