双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74AHCT2G08GD

Dual 2-input AND gate

The 74AHC2G08; 74AHCT2G08 is a dual 2-input AND gate. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments.

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Alternatives

Features and benefits

  • Symmetrical output impedance

  • Balanced propagation delays

  • Wide supply voltage range from 2.0 to 5.5 V

  • Overvoltage tolerant inputs to 5.5 V

  • Input levels:

    • For 74AHC2G08: CMOS level

    • For 74AHCT2G08: TTL level

  • High noise immunity

  • CMOS low power dissipation

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level A

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +80 °C and from -40 °C to +125 °C

文档 (4)

文件名称 标题 类型 日期
74AHC_AHCT2G08 Dual 2-input AND gate Data sheet 2023-09-01
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11106 Pin FMEA for AHC/AHCT family Application note 2019-01-09
ahct2g08 ahct2g08 IBIS model IBIS model 2013-04-08

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模型

文件名称 标题 类型 日期
ahct2g08 ahct2g08 IBIS model IBIS model 2013-04-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册