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Click here for more informationPEMH7
NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open
NPN/NPN resistor-equipped transistors (see ?Simplified outline, symbol and pinning? for package details).
Alternatives
Features and benefits
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
AEC-Q101 qualified
Applications
Low current peripheral driver
Replacement of general purpose transistors in digital applications
Control of IC inputs.
参数类型
型号 | Package version | Package name | Size (mm) |
---|---|---|---|
PEMH7 | SOT666 | SOT666 | 1.6 x 1.2 x 0.55 |
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PEMH7 | PEMH7,115 (934056863115) |
Obsolete | H3 |
![]() (SOT666) |
SOT666 |
REFLOW_BG-BD-1
|
SOT666_115 |
Series
文档 (10)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PEMH7_PUMH7 | NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open | Data sheet | 2003-10-01 |
SOT666 | 3D model for products with SOT666 package | Design support | 2019-01-22 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT666_mk | plastic, surface-mounted package; 6 leads; 1 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Marcom graphics | 2017-01-28 |
LSYMTRA | Letter Symbols - Transistors; General | Other type | 1999-05-06 |
SOT666 | plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Package information | 2022-06-01 |
PEMH7_Nexperia_Product_Quality | PEMH7 Nexperia Product Quality | Quality document | 2019-05-20 |
PEMH7_Nexperia_Product_Reliability | PEMH7 Nexperia Product Reliability | Quality document | 2021-03-19 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PEMH7 | PEMH7 SPICE model | SPICE model | 2024-04-05 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.