可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| GAN039-650NBB | GAN039-650NBBHP | 934662151128 | SOT8000 | 订单产品 |
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Click here for more informationGAN039-650NBB
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Features and benefits
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Simplified driver design as standard level MOSFET gate drivers can be used:
0 V to 12 V drive voltage
Gate threshold voltage VGSth of 4 V
Robust gate oxide with ±20 V VGS rating
High gate threshold voltage of 4 V for gate bounce immunity
Low body diode Vf for reduced losses and simplified dead-time adjustments
Transient over-voltage capability for increased robustness
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CCPAK package technology:
Improved reliability, with reduced Rth(j-mb) for optimal cooling
Lower inductances for lower switching losses and EMI
150 °C maximum junction temperature
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joints
Applications
Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
参数类型
| 型号 | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
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| GAN039-650NBB | SOT8000 | CCPAK1212 | Production | cascode | N | 1 | 650 | 39 | 150 | 58.5 | 5 | 26 | 250 | 187 | 3.9 | N | 1980 | 144 | 2020-07-30 |
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| GAN039-650NBB | GAN039-650NBBHP (934662151128) |
Active | 039INBB |
CCPAK1212 (SOT8000) |
SOT8000 | 暂无信息 |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
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描述 The H-bridge circuit is a full bridge DC-to-DC converter allowing operation of a brushed DC motor (48 V max, 12 V min, 5 A max). The control circuit operates with input voltages from 12 - 48 V for motors up to 250 W. The key feature of this design is that all electronic functions are designed with automotive qualified Nexperia discretes, MOSFETs and logic components (cost-effective, no microcontroller or software needed). In addition this H-bridge motor controller PCB allows the user to choose between three Nexperia MOSFET package options (LFPAK33, LFPAK56D or LFPAK56).
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类型 Reference design
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Shop link
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描述 The NX-HB-GAN039-BSCUL bottom-side cooled half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high side & low side logic inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 KW or more, dependent upon cooling, ambient temperature and switching frequency. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.
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类型 Evaluation board
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Quick links
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Shop link
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Series
文档 (16)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| GAN039-650NBB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package | Data sheet | 2024-05-28 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90030 | Paralleling of Nexperia cascode GaN FETs in half-bridge topology | Application note | 2023-03-22 |
| AN90030_translated | ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 | Application note | 2023-04-03 |
| AN90053 | Advanced SPICE models for Nexperia cascode Gallium Nitride (GaN) FETs | Application note | 2024-05-31 |
| SOT8000 | 3D model for products with SOT8000 package | Design support | 2023-02-07 |
| SOT8000 | Plastic, surface mounted copper clip package (CCPAK1212);13 terminals; 2.0 mm pitch, 12 mm x 9.4 mm x 2.5 mm body | Package information | 2024-04-18 |
| GAN039-650NxB_models_LTspice | GAN039-650NxB LTspice model | SPICE model | 2023-11-28 |
| GAN039-650NxB_models_SIMetrix | GAN039-650NxB SIMetrix SPICE model | SPICE model | 2023-11-28 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| UM90007 | NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs | User manual | 2024-08-21 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| GAN039-650NxB_models_LTspice | GAN039-650NxB LTspice model | SPICE model | 2023-11-28 |
| GAN039-650NxB_models_SIMetrix | GAN039-650NxB SIMetrix SPICE model | SPICE model | 2023-11-28 |
| SOT8000 | 3D model for products with SOT8000 package | Design support | 2023-02-07 |
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| GAN039-650NBB | GAN039-650NBBHP | 934662151128 | Active | 暂无信息 | 1,000 | 订单产品 |
样品
作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GAN039-650NBB
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
从安世半导体购买
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