可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
GANB1R2-040QBA | GANB1R2-040QBAZ | 934667629336 | SOT8092-1 | 订单产品 |
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Click here for more information40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
The GANB1R2-040QBA is a 40 V, 1.2 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistor (HEMT) in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance.
Enhancement mode - normally-off power switch
Bi-directional device
Ultra high frequency switching capability
Ultra-low on-state resistance
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm
High-side load switch
OVP protection in smart phone USB port
DC-to-DC converters
Power switch circuits
Stand-by power system
型号 | Package version | Package name | Product status | Nr of transistors | VDS [max] (V) | Tj [max] (°C) | QGD [typ] (nC) | Ptot [max] (W) | Automotive qualified | Ciss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|
GANB1R2-040QBA | SOT8092-1 | VQFN16 | Production | 1 | 40 | 125 | 32 | 105 | N | 3500 | 2024-09-17 |
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
GANB1R2-040QBA | GANB1R2-040QBAZ (934667629336) |
Active | 1R2AQBA |
![]() VQFN16 (SOT8092-1) |
SOT8092-1 | 暂无信息 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
GANB1R2-040QBA | 40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) | Data sheet | 2025-03-12 |
SOT8092-1 | VQFN16: very thin quad flatpack; no leads; 6 mm x 4 mm x 0.85 mm body | Package information | 2025-02-05 |
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型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
GANB1R2-040QBA | GANB1R2-040QBAZ | 934667629336 | Active | 暂无信息 | 2,500 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.