可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| GANB1R2-040QBA | GANB1R2-040QBAZ | 934667629336 | SOT8092-1 | 订单产品 |
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Click here for more informationGANB1R2-040QBA
40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
The GANB1R2-040QBA is a 40 V, 1.2 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistor (HEMT) in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance.
Features and benefits
Enhancement mode - normally-off power switch
Bi-directional device
Ultra high frequency switching capability
Ultra-low on-state resistance
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm
Applications
High-side load switch
OVP protection in smart phone USB port
DC-to-DC converters
Power switch circuits
Stand-by power system
参数类型
| 型号 | Package version | Package name | Product status | Nr of transistors | VDS [max] (V) | Tj [max] (°C) | QGD [typ] (nC) | Ptot [max] (W) | Automotive qualified | Ciss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|
| GANB1R2-040QBA | SOT8092-1 | VQFN16 | Production | 1 | 40 | 125 | 32 | 105 | N | 3500 | 2024-09-17 |
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| GANB1R2-040QBA | GANB1R2-040QBAZ (934667629336) |
Active | 1R2AQBA |
VQFN16 (SOT8092-1) |
SOT8092-1 | 暂无信息 |
文档 (2)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| GANB1R2-040QBA | 40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) | Data sheet | 2025-03-12 |
| SOT8092-1 | VQFN16: very thin quad flatpack; no leads; 6 mm x 4 mm x 0.85 mm body | Package information | 2025-02-05 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
No documents available
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| GANB1R2-040QBA | GANB1R2-040QBAZ | 934667629336 | Active | 暂无信息 | 2,500 | 订单产品 |
样品
作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GANB1R2-040QBA
40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
从安世半导体购买
| SKU | 库存* | MOQ | 单位价格 | 数量 |
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