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Click here for more informationPHP9NQ20T
N-channel TrenchMOS standard level FET
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
- Higher operating power due to low thermal resistance
- Low conduction losses due to low on-state resistance
- Suitable for high frequency applications due to fast switching characteristics
Applications
- DC-to-DC converters
- General purpose switching
- Motor control circuits
- Off-line switched-mode power supplies
- TV and computer monitor power supplies
参数类型
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PHP9NQ20T | SOT78 | TO-220AB | End of life | N | 1 | 200 | 400 | 175 | 8.7 | 12 | 24 | 88 | 500 | 3 | N | 959 | 93 | 2010-12-17 |
文档 (15)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11160 | Designing RC Snubbers | Application note | 2023-02-03 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
AN11172 | Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) | Application note | 2021-05-21 |
SOT78 | 3D model for products with SOT78 package | Design support | 2017-06-30 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT78 | plastic, single-ended package (heatsink mounted, 1 mounting hole); 3 leads; 2.54 mm pitch; 15.6 mm x 10 mm x 4.4 mm body | Package information | 2020-04-21 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
支持
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模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
SOT78 | 3D model for products with SOT78 package | Design support | 2017-06-30 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.