双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN4R1-80YSF

此产品已停产

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN4R1-80YSF SOT1023 LFPAK56E; Power-SO8 End of life N 1 80 4.1 175 19 79 294 97 3 Y 5057 2289 2018-07-10

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
PSMN4R1-80YSF PSMN4R1-80YSFX
(934660711115)
Obsolete 4F1S80J SOT1023
LFPAK56E; Power-SO8
(SOT1023)
SOT1023 REFLOW_BG-BD-1
SOT1023_115

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PSMN4R1-80YSF PSMN4R1-80YSFX PSMN4R1-80YSF rohs rhf
品质及可靠性免责声明

文档 (7)

文件名称 标题 类型 日期
AN90032 Low temperature soldering, application study Application note 2022-02-22
SOT1023 3D model for products with SOT1023 package Design support 2017-06-29
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_SOT1023_mk plastic, single-ended surface-mounted package (LFPAK56); 4 leads; 1.27 mm pitch; 4.58 mm x 5.13 mm x 1.03 mm body Marcom graphics 2017-01-28
SOT1023 plastic, single-ended surface-mounted package (LFPAK56E); 4 leads; 1.27 mm pitch Package information 2024-08-28
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
SOT1023 3D model for products with SOT1023 package Design support 2017-06-29

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.