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Click here for more informationPSMN7R8-100PSE
N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package
Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of Nexperia's "NextPower Live" portfolio, the PSMN7R8-100PSE is robust enough to withstand substantial in-rush and fault condition currents during turn on/off, whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in continued use. Ideal for telecommunication systems based on 48 V backplanes / supply rails.
Features and benefits
Enhanced safe operating area (SOA) for superior protection during linear mode operation
Low RDS(on) for low conduction losses
Applications
Electronic fuse
Hot-swap / Soft-start
Uninterruptible power supplies
Motor control
参数类型
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PSMN7R8-100PSE | SOT78 | TO-220AB | End of life | N | 1 | 100 | 7.8 | 175 | 41 | 128 | 294 | 210 | 3 | N | 7110 | 450 | 2014-05-16 |
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PSMN7R8-100PSE | PSMN7R8-100PSEQ (934068768127) |
Discontinued / End-of-life | PSMN7R8 100PSE |
![]() TO-220AB (SOT78) |
SOT78 | SOT78_127 |
环境信息
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
---|---|---|---|---|
PSMN7R8-100PSE | PSMN7R8-100PSEQ | PSMN7R8-100PSE |
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文档 (17)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PSMN7R8-100PSE | N-channel 100 V, 7.8 mΩ standard level MOSFET with improved SOA in TO220 package | Data sheet | 2018-04-03 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
AN11172 | Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) | Application note | 2021-05-21 |
SOT78 | 3D model for products with SOT78 package | Design support | 2017-06-30 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT78 | plastic, single-ended package (heatsink mounted, 1 mounting hole); 3 leads; 2.54 mm pitch; 15.6 mm x 10 mm x 4.4 mm body | Package information | 2020-04-21 |
Reliability_information_template_t6_sot78 | Reliability Information T6 SOT78 | Quality document | 2023-03-24 |
T6_SOT78_PSMN7R8-100PSE_Nexperia_Quality_document | PSMN7R8-100PSE Quality document | Quality document | 2023-03-23 |
PSMN7R8-100PSE_Spice | PSMN7R8-100PSE SPICE model | SPICE model | 2014-11-12 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
PSMN7R8-100PSE_RCthermal | PSMN7R8-100PSE Thermal design model | Thermal design | 2014-11-12 |
PSMN7R8-100PSE_FlowTherm | PSMN7R8-100PSE Thermal model | Thermal model | 2014-11-12 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PSMN7R8-100PSE_Spice | PSMN7R8-100PSE SPICE model | SPICE model | 2014-11-12 |
PSMN7R8-100PSE_RCthermal | PSMN7R8-100PSE Thermal design model | Thermal design | 2014-11-12 |
PSMN7R8-100PSE_FlowTherm | PSMN7R8-100PSE Thermal model | Thermal model | 2014-11-12 |
SOT78 | 3D model for products with SOT78 package | Design support | 2017-06-30 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.