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Click here for more informationPSMN8R7-100YSF
NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56 package
NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial & consumer applications.
Features and benefits
Low Qrr for higher efficiency and lower spiking
Qualified to 175 °C
Low QG x RDSon FOM for high efficiency switching applications
Strong avalanche energy rating (Eas)
Avalanche rated and 100% tested
Ha-free and RoHS compliant LFPAK56 package
Wave-solderable LFPAK56 package
Applications
Synchronous rectifier in AC-DC and DC-DC
BLDC motor control
USB-PD and mobile fast-charge adapters
LED lighting
Full-bridge and half-bridge applications
Flyback and resonant topologies
参数类型
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PSMN8R7-100YSF | SOT669 | LFPAK56; Power-SO8 | End of life | N | 1 | 100 | 9 | 175 | 90 | 7.5 | 38.5 | 198 | 52.6 | 3.1 | N | 2758 | 532 | 2017-03-24 |
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PSMN8R7-100YSF | PSMN8R7-100YSFX (934071221115) |
Discontinued / End-of-life | 8F7S10 |
![]() LFPAK56; Power-SO8 (SOT669) |
SOT669 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT669_115 |
环境信息
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
---|---|---|---|---|
PSMN8R7-100YSF | PSMN8R7-100YSFX | PSMN8R7-100YSF |
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文档 (23)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PSMN8R7-100YSF | NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56 package | Data sheet | 2018-03-13 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11160 | Designing RC Snubbers | Application note | 2023-02-03 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2017-05-05 |
AN90003 | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
LFPAK56_POWER-SO8_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
SOT669 | plastic, single-ended surface-mounted package; 4 terminals | Package information | 2022-05-30 |
Reliability_information_t8_sot669 | Reliability qualification information | Quality document | 2022-09-16 |
T8_SOT669_PSMN8R7-100YSF_Nexperia_Quality_document | PSMN8R7-100YSF Quality document | Quality document | 2022-09-20 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PSMN8R7-100YSF | PSMN8R7-100YSF SPICE model | SPICE model | 2017-07-19 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
PSMN8R7-100YSF_RCthermal | PSMN8R7-100YSF Thermal model | Thermal design | 2017-07-19 |
PSMN8R7-100YSF | PSMN8R7-100YSF Thermal model | Thermal model | 2017-07-19 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
PSMN8R7-100YSF | PSMN8R7-100YSF SPICE model | SPICE model | 2017-07-19 |
PSMN8R7-100YSF_RCthermal | PSMN8R7-100YSF Thermal model | Thermal design | 2017-07-19 |
PSMN8R7-100YSF | PSMN8R7-100YSF Thermal model | Thermal model | 2017-07-19 |
SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.