双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PMCM6501VNE

12 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage

  • Ultra small package: 0.98 × 1.48 × 0.35 mm

  • Trench MOSFET technology

  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Relay driver

  • High-speed line driver

  • Low-side loadswitch

  • Switching circuits

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) VESD (kV) (kV) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMCM6501VNE OL-PMCM6501VNE WLCSP6 Production N 1 12 8 18 22 2000 150 9.6 4.7 16.1 0.556 0.6 N 920 350 2015-07-29

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PMCM6501VNE PMCM6501VNEZ
(934068873023)		 Active OL-PMCM6501VNE
WLCSP6
(OL-PMCM6501VNE) 		OL-PMCM6501VNE pmcm6501vne-ssmos_fr
WLCSP6_023

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PMCM6501VNE PMCM6501VNEZ PMCM6501VNE rohs rhf rhf
品质及可靠性免责声明

Series

文档 (16)

文件名称 标题 类型 日期
PMCM6501VNE 12 V, N-channel Trench MOSFET Data sheet 2017-05-04
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
OL-PMCM6501VNE 3D model for products with OL-PMCM6501VNE package Design support 2023-03-13
nexperia_document_leaflet_SsMOS_for_mobile_2022-CHN 适合移动和便携式设备的 大批量小信号MOSFET， 采用WLCSP和无引脚DFN封装 Leaflet 2022-07-04
nexperia_document_leaflet_SsMOS_for_mobile_2022 High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages Leaflet 2022-07-04
nexperia_document_leaflet_WLCSP_201803 Small-signal MOSFETs in WLCSP - Smallest size - lowest RDS(on) Leaflet 2018-04-25
nexperia_document_leaflet_WLCSP_201803_CHN WLCSP Chinese Translation Leaflet 2018-04-25
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
OL-PMCM6501VNE WLCSP6: wafer level chip-size package; 6 bumps (3 x 2) Package information 2022-07-13
WLCSP6_023 PMCM650xxxx; Reel pack for SMD, 7"; Q1/T1 product orientation Packing information 2020-06-23
pmcm6501vne-ssmos_fr pmcm6501vne-ssmos_fr Reflow soldering 2015-07-10
PMCM6501VNE PMCM6501VNE Spice model SPICE model 2018-07-02
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PMCM6501VNE PMCM6501VNE Spice model SPICE model 2018-07-02
OL-PMCM6501VNE 3D model for products with OL-PMCM6501VNE package Design support 2023-03-13

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
PMCM6501VNE PMCM6501VNEZ 934068873023 Active OL-PMCM6501VNE_023 4,500 订单产品

样品

作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PMCM6501VNE PMCM6501VNEZ 934068873023 OL-PMCM6501VNE 订单产品