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Click here for more informationPMPB16XN
30 V, single N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
- Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
- Tin-plated 100 % solderable side pads for optical solder inspection
Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portable devices
- Hard disk and computing power management
参数类型
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMPB16XN | SOT1220 | DFN2020MD‑6 | End of life | N | 1 | 30 | 12 | 21 | 30 | 150 | 10.3 | 2.2 | 7.2 | 1.7 | 1 | N | 775 | 155 | 2012-09-20 |
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PMPB16XN | PMPB16XN,115 (934066866115) |
Obsolete |
![]() DFN2020MD‑6 (SOT1220) |
SOT1220 |
REFLOW_BG-BD-1
|
SOT1220_115 |
文档 (21)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PMPB16XN | 30 V, single N-channel Trench MOSFET | Data sheet | 2012-09-20 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11119 | Medium power small-signal MOSFETs in DC-to-DC conversion | Application note | 2013-05-07 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11304 | MOSFET load switch PCB with thermal measurement | Application note | 2013-01-28 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
Nexperia_asset_document_brochure_autoDFN_CN_LR | 小巧轻便的汽车 二极管和晶体管 | Brochure | 2022-04-26 |
SOT1220 | 3D model for products with SOT1220 package | Design support | 2018-08-23 |
Nexperia_AutoDFN_factsheet_2022 | Small & light automotive diodes and transistors | Leaflet | 2022-04-13 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
DFN2020MD-6_SOT1220_mk | plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
SOT1220 | plastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Package information | 2022-06-02 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
nexperia_report_aoi_inspection_dfn_201808 | Automatic Optical Inspection of DFN Components | Report | 2018-09-03 |
PMPB16XN_17_8_2012 | PMPB16XN Spice model | SPICE model | 2013-12-13 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PMPB16XN_17_8_2012 | PMPB16XN Spice model | SPICE model | 2013-12-13 |
SOT1220 | 3D model for products with SOT1220 package | Design support | 2018-08-23 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.