双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PMPB43XPE

20 V, single P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

此产品已停产

Features and benefits

  • 1 kV ESD protected

  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

  • Exposed drain pad for excellent thermal conduction

  • Tin-plated 100 % solderable side pads for optical solder inspection

Applications

  • Charging switch for portable devices

  • DC-to-DC converters

  • Power management in battery-driven portable devices

  • Hard disk and computing power management

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) VESD (kV) (kV) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMPB43XPE SOT1220 DFN2020MD‑6 End of life P 1 -20 12 48 59 1000 150 -5 3.4 15.6 1.7 -0.68 N 1550 142 2012-11-30

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PMPB43XPE PMPB43XPE,115
(934066877115)		 Discontinued / End-of-life 1Y SOT1220
DFN2020MD‑6
(SOT1220) 		SOT1220 REFLOW_BG-BD-1
SOT1220_115

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PMPB43XPE PMPB43XPE,115 PMPB43XPE rohs rhf rhf
品质及可靠性免责声明

文档 (21)

文件名称 标题 类型 日期
PMPB43XPE 20 V, single P-channel Trench MOSFET Data sheet 2017-05-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11304 MOSFET load switch PCB with thermal measurement Application note 2013-01-28
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
Nexperia_asset_document_brochure_autoDFN_CN_LR 小巧轻便的汽车 二极管和晶体管 Brochure 2022-04-26
SOT1220 3D model for products with SOT1220 package Design support 2018-08-23
Nexperia_AutoDFN_factsheet_2022 Small & light automotive diodes and transistors Leaflet 2022-04-13
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN2020MD-6_SOT1220_mk plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Marcom graphics 2017-01-28
SOT1220 plastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Package information 2022-06-02
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
nexperia_report_aoi_inspection_dfn_201808 Automatic Optical Inspection of DFN Components Report 2018-09-03
nexperia_report_aoi_inspection_dfn_201808 Automatic Optical Inspection of DFN Components Report 2018-09-03
PMPB43XPE_21_10_12 PMPB43XPE Spice model SPICE model 2013-12-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PMPB43XPE_21_10_12 PMPB43XPE Spice model SPICE model 2013-12-13
SOT1220 3D model for products with SOT1220 package Design support 2018-08-23

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册