TO-247 GaN FETs
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TO-247 GaN FETs
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Products
GaN FETs
| 型号 | 描述 | 状态 | 快速访问 |
|---|---|---|---|
| GAN063-650WSA | 650 V, 50 mΩ Gallium Nitride (GaN) FET | NotForDesignIn | |
| GAN041-650WSB | 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package | Production |
Documentation
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| TO-247_SOT429_mk.png | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
| AN90006.pdf | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90005.pdf | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| TN90004.pdf | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| nexperia_whitepaper_gan_need_for_efficient_conversion.pdf | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN.pdf | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020.pdf | MOSFET & GaN FET Application Handbook | User manual | 2020-11-05 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese.pdf | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
| vp_TO-247_GaN_FETs.zip | TO-247 GaN FETs | Value proposition | 2022-01-28 |
| AN90030.pdf | Paralleling of Nexperia cascode GaN FETs in half-bridge topology | Application note | 2023-03-22 |
| Nexperia_Selection_guide_2023.pdf | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
| AN90053.pdf | Advanced SPICE models for Nexperia cascode Gallium Nitride (GaN) FETs | Application note | 2024-05-31 |
| nexperia_document_leaflet_GaNFETs_2024.pdf | Power GaN FETs | Leaflet | 2024-07-24 |
| nexperia_document_leaflet_GaNFETs_2024-CHN.pdf | Power GaN FETs Chinese | Leaflet | 2024-07-31 |