双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

SOT8015

SOT8015

plastic, leadless extremely thin small outline package with side-wettable flanks (SWF); 3 terminals; 0.65 mm pitch; 1.1 mm x 1 mm x 0.48 mm body

外形图

封装版本 封装名称 封装说明 参考 发行日期
SOT8015 DFN1110D-3 plastic, leadless extremely thin small outline package with side-wettable flanks (SWF); 3 terminals; 0.65 mm pitch; 1.1 mm x 1 mm x 0.48 mm body MO-340BA (JEDEC) 2019-11-29

相关文档

文件名称 标题 类型 日期
AN90023 Thermal performance of DFN packages Application note 2020-11-23
AN90023_ZH Thermal performance of DFN packages Application note 2021-02-26
AN90032 Low temperature soldering, application study Application note 2022-02-22
Nexperia_asset_document_brochure_autoDFN_CN_LR 小巧轻便的汽车 二极管和晶体管 Brochure 2022-04-26
SOT8015 3D model for products with SOT8015 package Design support 2022-05-03
Nexperia_AutoDFN_factsheet_2022 Small & light automotive diodes and transistors Leaflet 2022-04-13
SOT8015 plastic, leadless extremely thin small outline package with side-wettable flanks (SWF); 3 terminals; 0.65 mm pitch; 1.1 mm x 1 mm x 0.48 mm body Package information 2023-05-31
SOT8015_147 DFN1110D-3; Reel pack for SMD, 7"; Q2/T3 product orientation Packing information 2021-02-08
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06

采用此封装的产品

Automotive qualified products (AEC-Q100/Q101)

型号 描述 快速访问
2N7002KQB 60 V N-channel Trench MOSFET
BSS84AKQB 50 V, P-channel Trench MOSFET
PESD2CANFD27U-QB ESD protection for In-vehicle networks
PESD2CANFD24U-QB ESD protection for In-vehicle networks
PESD2CANFD27V-QB ESD protection for in-vehicle networks
PESD2CANFD24V-QB ESD protection for in-vehicle networks
BC807-16QB-Q 45 V, 500 mA PNP general-purpose transistors
BC847AQB-Q 45 V, 100 mA NPN general-purpose transistor
BAS21QB-Q High-voltage switching diode
BC847CQB-Q 45 V, 100 mA NPN general-purpose transistor
BC847BQB-Q 45 V, 100 mA NPN general-purpose transistor
PDTC114YQB-Q 50 V, 100 mA NPN resistor-equipped transistors
BC817-16QB-Q 45 V, 500 mA NPN general-purpose transistors
PDTC123JQB-Q 50 V, 100 mA NPN resistor-equipped transistors
PDTC114EQB-Q 50 V, 100 mA NPN resistor-equipped transistors
PDTA143EQB-Q 50 V, 100 mA PNP resistor-equipped transistors
BC856AQB-Q 65 V, 100 mA PNP general-purpose transistors
PDTC143EQB-Q 50 V, 100 mA NPN resistor-equipped transistors
BC856BQB-Q 65 V, 100 mA PNP general-purpose transistors
PDTA114EQB-Q 50 V, 100 mA PNP resistor-equipped transistors
PDTA143ZQB-Q 50 V, 100 mA PNP resistor-equipped transistors
BC817-16QBH-Q 45 V, 500 mA NPN general-purpose transistors
PDTA144EQB-Q 50 V, 100 mA PNP resistor-equipped transistors
PDTA143XQB-Q 50 V, 100 mA PNP resistor-equipped transistors
BC807-16QBH-Q 45 V, 500 mA PNP general-purpose transistors
PDTC124XQB-Q 50 V, 100 mA NPN resistor-equipped transistors
PDTA124EQB-Q 50 V, 100 mA PNP resistor-equipped transistors
BC807-40QBH-Q 45 V, 500 mA PNP general-purpose transistors
BC807-25QB-Q 45 V, 500 mA PNP general-purpose transistors
BC857BQB-Q 45 V, 100 mA PNP general-purpose transistors
BC846BQB-Q 65 V, 100 mA NPN general-purpose transistor
BAT54QB-Q Schottky barrier diode
BC846AQB-Q 65 V, 100 mA NPN general-purpose transistor
BC817-40QB-Q 45 V, 500 mA NPN general-purpose transistors
PESD2CANFD36VQB-Q Extremely low clamping bidirectional ESD protection diode
PDTA124XQB-Q 50 V, 100 mA PNP resistor-equipped transistors
BC817-25QBH-Q 45 V, 500 mA NPN general-purpose transistors
BAV99QB-Q Dual series high-speed switching diodes
PESD2CANFD24UQB-Q ESD protection for in-vehicle networks
BC857CQB-Q 45 V, 100 mA PNP general-purpose transistors
PDTA123YQB-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2: 10 kΩ
PDTC144EQB-Q 50 V, 100 mA NPN resistor-equipped transistors
PDTA123JQB-Q 50 V, 100 mA PNP resistor-equipped transistors
BC817-40QBH-Q 45 V, 500 mA NPN general-purpose transistors
PDTA114YQB-Q 50 V, 100 mA PNP resistor-equipped transistors
PESD2CANFD24VQB-Q ESD protection for in-vehicle networks
BC857AQB-Q 45 V, 100 mA PNP general-purpose transistors
PESD2CANFD27UQB-Q ESD protection for in-vehicle networks
PESD2CANFD36LQB-Q Extremely low clamping bidirectional ESD protection diode
BAV70QB-Q Dual common cathode high-speed switching diode
BC817-25QB-Q 45 V, 500 mA NPN general-purpose transistors
BC807-40QB-Q 45 V, 500 mA PNP general-purpose transistors
PESD2CANFD36UQB-Q Extremely low clamping bidirectional ESD protection diode
PDTC123YQB-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2: 10 kΩ
PDTC143ZQB-Q 50 V, 100 mA NPN resistor-equipped transistors
BC807-25QBH-Q 45 V, 500 mA PNP general-purpose transistors
PDTC143XQB-Q 50 V, 100 mA NPN resistor-equipped transistors
PESD2CANFD33UQB-Q Extremely low clamping bidirectional ESD protection diode
PESD2CANFD27VQB-Q ESD protection for in-vehicle networks
PDTC124EQB-Q 50 V, 100 mA NPN resistor-equipped transistors
BSS138AKQB-Q 60 V, N-channel Trench MOSFET
2N7002AKQB-Q 60 V, N-channel Trench MOSFET
BAW56QB-Q Dual common anode high-speed switching diode

Bipolar transistors

型号 描述 快速访问
BC817-16QB 45 V, 500 mA NPN general-purpose transistors
BC857AQB 45 V, 100 mA PNP general-purpose transistors
BC807-16QB 45 V, 500 mA PNP general-purpose transistors
BC847AQB 45 V, 100 mA NPN general-purpose transistor
BC817-40QB 45 V, 500 mA NPN general-purpose transistors
BC807-40QB 45 V, 500 mA PNP general-purpose transistors
BC807-25QB 45 V, 500 mA PNP general-purpose transistors
BC847BQB 45 V, 100 mA NPN general-purpose transistor
BC807-16QB-Q 45 V, 500 mA PNP general-purpose transistors
BC847AQB-Q 45 V, 100 mA NPN general-purpose transistor
PDTC144EQB 50 V, 100 mA NPN resistor-equipped transistors
BC847CQB-Q 45 V, 100 mA NPN general-purpose transistor
BC847BQB-Q 45 V, 100 mA NPN general-purpose transistor
PDTA124XQB 50 V, 100 mA PNP resistor-equipped transistors
PDTC114YQB-Q 50 V, 100 mA NPN resistor-equipped transistors
BC817-16QB-Q 45 V, 500 mA NPN general-purpose transistors
PDTC123JQB-Q 50 V, 100 mA NPN resistor-equipped transistors
PDTC114EQB-Q 50 V, 100 mA NPN resistor-equipped transistors
PDTA143EQB-Q 50 V, 100 mA PNP resistor-equipped transistors
BC856AQB-Q 65 V, 100 mA PNP general-purpose transistors
PDTC143EQB-Q 50 V, 100 mA NPN resistor-equipped transistors
BC856BQB-Q 65 V, 100 mA PNP general-purpose transistors
PDTA114EQB-Q 50 V, 100 mA PNP resistor-equipped transistors
PDTA143ZQB-Q 50 V, 100 mA PNP resistor-equipped transistors
BC817-16QBH-Q 45 V, 500 mA NPN general-purpose transistors
PDTA144EQB-Q 50 V, 100 mA PNP resistor-equipped transistors
PDTA143XQB-Q 50 V, 100 mA PNP resistor-equipped transistors
BC807-16QBH-Q 45 V, 500 mA PNP general-purpose transistors
PDTC124XQB-Q 50 V, 100 mA NPN resistor-equipped transistors
PDTA124EQB-Q 50 V, 100 mA PNP resistor-equipped transistors
BC807-40QBH-Q 45 V, 500 mA PNP general-purpose transistors
BC807-25QB-Q 45 V, 500 mA PNP general-purpose transistors
BC856AQB 65 V, 100 mA PNP general-purpose transistors
BC856BQB 65 V, 100 mA PNP general-purpose transistors
BC857BQB-Q 45 V, 100 mA PNP general-purpose transistors
BC846BQB 45 V, 100 mA NPN general-purpose transistor
BC846AQB 45 V, 100 mA NPN general-purpose transistor
BC846BQB-Q 65 V, 100 mA NPN general-purpose transistor
BC846AQB-Q 65 V, 100 mA NPN general-purpose transistor
BC817-40QB-Q 45 V, 500 mA NPN general-purpose transistors
PDTA124XQB-Q 50 V, 100 mA PNP resistor-equipped transistors
PDTC114EQB 50 V, 100 mA NPN resistor-equipped transistors
BC817-25QBH-Q 45 V, 500 mA NPN general-purpose transistors
BC857CQB-Q 45 V, 100 mA PNP general-purpose transistors
PDTA123YQB-Q 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2: 10 kΩ
PDTC144EQB-Q 50 V, 100 mA NPN resistor-equipped transistors
PDTA123JQB-Q 50 V, 100 mA PNP resistor-equipped transistors
BC817-40QBH-Q 45 V, 500 mA NPN general-purpose transistors
PDTA114YQB-Q 50 V, 100 mA PNP resistor-equipped transistors
BC857AQB-Q 45 V, 100 mA PNP general-purpose transistors
PDTC123YQB 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2: 10 kΩ
BC817-25QB-Q 45 V, 500 mA NPN general-purpose transistors
BC807-40QB-Q 45 V, 500 mA PNP general-purpose transistors
PDTA123YQB 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2: 10 kΩ
PDTC123YQB-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2: 10 kΩ
PDTC143ZQB-Q 50 V, 100 mA NPN resistor-equipped transistors
BC807-25QBH-Q 45 V, 500 mA PNP general-purpose transistors
PDTC143XQB-Q 50 V, 100 mA NPN resistor-equipped transistors
PDTC124EQB-Q 50 V, 100 mA NPN resistor-equipped transistors

Diodes

型号 描述 快速访问
BAS21QB-Q High-voltage switching diode
BAT54QB-Q Schottky barrier diode
BAV99QB-Q Dual series high-speed switching diodes
BAV99QB Dual series high-speed switching diodes
BAV70QB Dual common cathode high-speed switching diode
BAV70QB-Q Dual common cathode high-speed switching diode
BAW56QB Dual common anode high-speed switching diode
BAW56QB-Q Dual common anode high-speed switching diode

ESD protection, TVS, filtering and signal conditioning

型号 描述 快速访问
PESD2CANFD27U-QB ESD protection for In-vehicle networks
PESD2CANFD24U-QB ESD protection for In-vehicle networks
PESD2CANFD27V-QB ESD protection for in-vehicle networks
PESD2CANFD24V-QB ESD protection for in-vehicle networks
PESD2CANFD36VQB-Q Extremely low clamping bidirectional ESD protection diode
PESD2CANFD24UQB-Q ESD protection for in-vehicle networks
PESD2CANFD24VQB-Q ESD protection for in-vehicle networks
PESD2CANFD27UQB-Q ESD protection for in-vehicle networks
PESD2CANFD36LQB-Q Extremely low clamping bidirectional ESD protection diode
PESD2CANFD36UQB-Q Extremely low clamping bidirectional ESD protection diode
MMBZ33VBQB-Q Low capacitance bidirectional dual line ESD protection diode
MMBZ27VBQB-Q Low capacitance bidirectional dual line ESD protection diode
PESD2CANFD33UQB-Q Extremely low clamping bidirectional ESD protection diode
PESD2CANFD27VQB-Q ESD protection for in-vehicle networks
MMBZ33VB-QB Low capacitance bidirectional dual line ESD protection diode

MOSFETs

型号 描述 快速访问
2N7002KQB 60 V N-channel Trench MOSFET
BSS84AKQB 50 V, P-channel Trench MOSFET
BSS138AKQB-Q 60 V, N-channel Trench MOSFET
2N7002AKQB-Q 60 V, N-channel Trench MOSFET