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产品
型号 | 描述 | 状态 | 快速访问 |
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GANE3R9-150QBA | 150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) | Production | |
GANE1R8-100QBA | 100 V, 1.8 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) | Development | |
GANE7R0-100CBA | 100 V, 7.0 mOhm Gallium Nitride (GaN) FET in a 2.5 mm x 1.5 mm Wafer Level Chip-Scale Package (WLCSP) | Development | |
GANE2R7-100CBA | 100 V, 2.7 mOhm Gallium Nitride (GaN) FET in a 4.45 mm x 2.30 mm Wafer Level Chip-Scale Package (WLCSP) | Development | |
GAN7R0-150LBE | 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package | Production | |
GAN3R2-100CBE | 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) | Production |
Application note (1) |
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文件名称 | 标题 | 类型 | 日期 |
AN90021.pdf | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
Leaflet (2) |
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文件名称 | 标题 | 类型 | 日期 |
nexperia_document_leaflet_GaNFETs_2024-CHN.pdf | Power GaN FETs Chinese | Leaflet | 2024-07-31 |
nexperia_document_leaflet_GaNFETs_2024.pdf | Power GaN FETs | Leaflet | 2024-07-24 |
Marcom graphics (1) |
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文件名称 | 标题 | 类型 | 日期 |
WLCSP8_SOT8072-combi_mk.png | wafer level chip-scale package; 8 solder bars; body: 3.5 x 2.13 x 0.429 mm | Marcom graphics | 2023-04-20 |
White paper (3) |
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文件名称 | 标题 | 类型 | 日期 |
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese.pdf | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN.pdf | 白皮书: 功率GaN技术: 高效功率转换的需求 | White paper | 2020-08-17 |
nexperia_whitepaper_gan_need_for_efficient_conversion.pdf | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |