双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NSF060120D7A0

1200 V, 60 mΩ N-channel SiC MOSFET

The NSF060120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.

Features and benefits

  • Excellent RDSon temperature stability

  • Very low switching losses

  • Fast reverse recovery

  • Fast switching speed

  • Temperature independent turn-off switching losses

  • Very fast and robust intrinsic body diode

  • Faster commutation and improved switching due to the additional Kelvin source pin

Applications

  • E-vehicle charging infrastructure

  • Photovoltaic inverters

  • Switch mode power supply

  • Uninterruptable power supply

  • Motor drives

参数类型

型号 Product status Qualification Drain-source breakdown voltage (V) Drain-source on-state resistance at 15 V (mΩ) Drain-source on-state resistance at 18 V (mΩ) ID [max] (A) Rth(j-c) [typ] (K/W) Package name QG(tot) [typ] (nC) Tj [max] (°C)
NSF060120D7A0 Production Industrial 1200 80 60 38 0.68 TO-263-7 57 175

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
NSF060120D7A0 NSF060120D7A0J
(934667964118)		 Active 60120D7A0 SOT8070-1
TO-263-7
(SOT8070-1) 		SOT8070-1 SOT8070-1_118

Boards

Part number Description Type Quick links Shop link
SiC double-pulse half-bridge evaluation board - NEVB-HB-NSFD7-A
SiC double-pulse half-bridge evaluation board - NEVB-HB-NSFD7-A
描述
The SiC half-bridge evaluation board facilitates double-pulse testing of SiC MOSFETs in a bottom-side cooled package (TO-263-7). The device has been designed with low inductance in mind and incorporates a high-bandwidth current shunt, allowing for the evaluation of switching performance with optimal precision. Moreover, it can be employed for thermal investigations and continuous operation at several kilowatts.
类型
Evaluation board
Quick links
Shop link

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
NSF060120D7A0 NSF060120D7A0J NSF060120D7A0 rohs rhf
品质及可靠性免责声明

文档 (5)

文件名称 标题 类型 日期
NSF060120D7A0 1200 V, 60 mΩ, N-channel SiC MOSFET Data sheet 2024-05-14
SOT8070-1 plastic single-ended surface-mounted package; 7 leads Package information 2024-05-13
SOT8070-1_118 D2PAK-7L; Reel pack for SMD, 13"; Q2/T3 product orientation Packing information 2024-05-15
NSF060120D7A0_model_LTspice_V1_0 NSF060120D7A0 LTspice model SPICE model 2024-05-21
UM90031 A guide to using Nexperia SiC MOSFET LTspice models User manual 2024-07-02

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
NSF060120D7A0_model_LTspice_V1_0 NSF060120D7A0 LTspice model SPICE model 2024-05-21

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
NSF060120D7A0 NSF060120D7A0J 934667964118 Active SOT8070-1_118 800 订单产品

样品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
NSF060120D7A0 NSF060120D7A0J 934667964118 SOT8070-1 订单产品