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Click here for more information2PC4617R
NPN general-purpose transistor
NPN transistor in a SOT416 (SC-75) plastic package. The PNP complement is 2PA1774.
Features and benefits
- Low current (max. 150 mA)
- Low voltage (max. 50 V)
- AEC-Q101 qualified
Applications
- General-purpose switching and amplification in communication, Electronic Data Processing (EDP) and consumer applications.
参数类型
型号 | Package version | Package name | Size (mm) |
---|---|---|---|
2PC4617R | SOT416 | SC-75 | 1.6 x 0.75 x 0.9 |
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
2PC4617R | 2PC4617R,115 (934043530115) |
Obsolete |
SC-75 (SOT416) |
SOT416 | SOT416_115 | ||
2PC4617R,135 (934043530135) |
Obsolete | SOT416_135 | |||||
2PC4617R/DG,115 (934061908115) |
Obsolete | SOT416_115 | |||||
2PC4617R/A2,115 (934063168115) |
Obsolete | SOT416_115 |
环境信息
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
---|---|---|---|---|
2PC4617R | 2PC4617R,115 | 2PC4617R | ||
2PC4617R | 2PC4617R,135 | 2PC4617R | ||
2PC4617R | 2PC4617R/DG,115 | 2PC4617R | ||
2PC4617R | 2PC4617R/A2,115 | 2PC4617R |
Series
文档 (5)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
2PC4617 | NPN general-purpose transistor | Data sheet | 2009-12-07 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
LSYMTRA | Letter Symbols - Transistors; General | Other type | 1999-05-06 |
SOT416 | plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body | Package information | 2020-04-21 |
2PC4617R | 2PC4617R SPICE model | SPICE model | 2024-08-27 |
支持
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模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
2PC4617R | 2PC4617R SPICE model | SPICE model | 2024-08-27 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.