双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74AHCT2G126GD

Dual buffer/line driver; 3-state

The 74AHC2G126; 74AHCT2G126 is a dual buffer/line driver with 3-state outputs controlled by the output enable inputs (nOE). Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments.

此产品已停产

Alternatives

Features and benefits

  • Symmetrical output impedance

  • Wide supply voltage range from 2.0 to 5.5 V

  • Overvoltage tolerant inputs to 5.5 V

  • Input levels:

    • For 74AHC2G126: CMOS level

    • For 74AHCT2G126: TTL level

  • High noise immunity

  • CMOS low power dissipation

  • Balanced propagation delays

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level A

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +125 °C

参数类型

型号 Package name
74AHCT2G126GD XSON8

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74AHCT2G126GD 74AHCT2G126GD,125
(935288557125)		 Obsolete C26 SOT996-2
XSON8
(SOT996-2) 		SOT996-2 SOT996-2_125

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74AHCT2G126GD 74AHCT2G126GD,125 74AHCT2G126GD rohs rhf rhf
品质及可靠性免责声明

Series

文档 (5)

文件名称 标题 类型 日期
74AHC_AHCT2G126 Dual buffer/line driver; 3-state Data sheet 2023-09-01
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11106 Pin FMEA for AHC/AHCT family Application note 2019-01-09
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

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模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册