双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74AUP1T97GW-Q100

Low-power configurable gate with voltage-level translator

The 74AUP1T97-Q100 is a configurable multiple function gate with level translating, Schmitt-trigger inputs. The device can be configured as any of the following logic functions MUX, AND, OR, NAND, NOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to VCC or GND. Low threshold Schmitt trigger inputs allow these devices to be driven by 1.8 V logic levels in 3.3 V applications. This device ensures very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

    • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

  • Wide supply voltage range from 2.3 V to 3.6 V

  • CMOS low power dissipation

  • High noise immunity

  • Overvoltage tolerant inputs to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial power-down mode operation

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Low static power consumption; ICC = 1.5 μA (maximum)

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

参数类型

型号 VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C) Package name
74AUP1T97GW-Q100 2.3 - 3.6 CMOS ± 4 3.9 70 1 ultra low -40~125 TSSOP6

封装

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
74AUP1T97GW-Q100 74AUP1T97GW-Q100H
(935691179125)
Active 59 SOT363-2
TSSOP6
(SOT363-2)
SOT363-2 SOT363-2_125

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74AUP1T97GW-Q100 74AUP1T97GW-Q100H 74AUP1T97GW-Q100 rohs rhf rhf
品质及可靠性免责声明

文档 (5)

文件名称 标题 类型 日期
74AUP1T97_Q100 Low-power configurable gate with voltage-level translator Data sheet 2023-07-17
SOT363-2 3D model for products with SOT363-2 package Design support 2023-02-02
SOT363-2 plastic thin shrink small outline package; 6 leads; body width 1.25 mm Package information 2022-11-21
SOT363-2_125 TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation Packing information 2022-11-04
74AUP1T97GW-Q100_Nexperia_Product_Reliability 74AUP1T97GW-Q100 Nexperia Product Reliability Quality document 2024-06-16

支持

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模型

文件名称 标题 类型 日期
SOT363-2 3D model for products with SOT363-2 package Design support 2023-02-02

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
74AUP1T97GW-Q100 74AUP1T97GW-Q100H 935691179125 Active SOT363-2_125 3,000 订单产品

样品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
74AUP1T97GW-Q100 74AUP1T97GW-Q100H 935691179125 SOT363-2 订单产品