双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74AVC16T245BX

16-bit dual supply translating transceiver with configurable voltage translation; 3-state

The 74AVC16T245 is a 16-bit transceiver with bidirectional level voltage translation and 3-state outputs. The device can be used as two 8-bit transceivers or as a 16-bit transceiver. It has dual supplies (VCC(A) and VCC(B)) for voltage translation and four 8-bit input-output ports (nAn and nBn) each with its own output enable (nOE) and send/receive (nDIR) input for direction control. VCC(A) and VCC(B) can be independently supplied at any voltage between 0.8 V and 3.6 V making the device suitable for low voltage translation between any of the following voltages: 0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V. A HIGH on nDIR selects transmission from nAn to nBn while a LOW on nDIR selects transmission from nBn to nAn. A HIGH on nOE causes the outputs to assume a high-impedance OFF-state

The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at GND level, both nAn and nBn are in the high-impedance OFF-state.

此产品已停产

Features and benefits

  • Wide supply voltage range:

    • VCC(A): 0.8 V to 3.6 V

    • VCC(B): 0.8 V to 3.6 V

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8-B (2.7 V to 3.6 V)

  • Maximum data rates:

    • 380 Mbit/s (≥ 1.8 V to 3.3 V translation)

    • 200 Mbit/s (≥ 1.1 V to 3.3 V translation)

    • 200 Mbit/s (≥ 1.1 V to 2.5 V translation)

    • 200 Mbit/s (≥ 1.1 V to 1.8 V translation)

    • 150 Mbit/s (≥ 1.1 V to 1.5 V translation)

    • 100 Mbit/s (≥ 1.1 V to 1.2 V translation)

  • Suspend mode

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Inputs accept voltages up to 3.6 V

  • IOFF circuitry provides partial Power-down mode operation

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 8000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

参数类型

型号 Package name
74AVC16T245BX HXQFN60U

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
74AVC16T245BX 74AVC16T245BX,518
(935295866518)
Obsolete AVC16T245 Standard Procedure Standard Procedure no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74AVC16T245BX 74AVC16T245BX,518 74AVC16T245BX rohs rhf rhf
品质及可靠性免责声明

文档 (4)

文件名称 标题 类型 日期
74AVC16T245 16-bit dual supply translating transceiver with configurable voltage translation; 3-state Data sheet 2024-06-25
AN90007 Pin FMEA for AVC family Application note 2018-11-30
Nexperia_document_guide_Logic_translators Nexperia Logic Translators Brochure 2021-04-12
avc16t245 AVC16T245 IBIS model IBIS model 2013-05-06

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模型

文件名称 标题 类型 日期
avc16t245 AVC16T245 IBIS model IBIS model 2013-05-06

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.