双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74AXP2G14GM

Low-power dual Schmitt trigger inverter

The 74AXP2G14 is a dual inverter with Schmitt-trigger inputs. It transforms slowly changing input signals into sharply defined, jitter-free output signals.

This device ensures very low static and dynamic power consumption across the entire VCC range from 0.7 V to 2.75 V. It is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此产品已停产

Features and benefits

  • Wide supply voltage range from 0.7 V to 2.75 V

  • Low input capacitance; CI = 0.5 pF (typical)

  • Low output capacitance; CO = 1.0 pF (typical)

  • Low dynamic power consumption; CPD = 2.4 pF at VCC = 1.2 V (typical)

  • Low static power consumption; ICC = 1.0 μA (85 °C maximum)

  • High noise immunity

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Inputs accept voltages up to 2.75 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation

  • Complies with JEDEC standard:

    • JESD8-12A.01 (1.1 V to 1.3 V)

    • JESD8-11A.01 (1.4 V to 1.6 V)

    • JESD8-7A (1.65 V to 1.95 V)

    • JESD8-5A.01 (2.3 V to 2.7 V)

  • ESD protection:

    • HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2000 V

    • CDM JESD22-C101E exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C

参数类型

型号 Logic switching levels Output drive capability (mA) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C)
74AXP2G14GM CMOS ± 4.5 70 2 ultra low -40~85

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
74AXP2G14GM 74AXP2G14GMH
(935304096125)
Obsolete no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74AXP2G14GM 74AXP2G14GMH 74AXP2G14GM rohs rhf rhf
品质及可靠性免责声明

文档 (4)

文件名称 标题 类型 日期
74AXP2G14 Low-power dual Schmitt trigger inverter Data sheet 2022-02-22
axp2g14 74AXP2G14 IBIS model IBIS model 2015-09-08
Nexperia_document_leaflet_Logic_AXP_technology_portfolio_201904 AXP – Extremely low-power logic technology portfolio Leaflet 2019-04-05
74AXP2G14GM_Nexperia_Product_Reliability 74AXP2G14GM Nexperia Product Reliability Quality document 2022-05-04

支持

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模型

文件名称 标题 类型 日期
axp2g14 74AXP2G14 IBIS model IBIS model 2015-09-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.