双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74HC2G66GD

Dual single-pole single-throw analog switch

The 74HC2G66; 74HCT2G66 is a dual single pole, single-throw analog switch. Each switch has two input/output terminals (nY and nZ) and a digital enable input (nE). When nE is LOW, the analog switch is turned off. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.

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Alternatives

Features and benefits

  • Wide supply voltage range from 2.0 V to 10.0 V for 74HC2G66

  • Very low ON resistance:

    • 41 Ω (typ.) at VCC = 4.5 V

    • 30 Ω (typ.) at VCC = 6.0 V

    • 21 Ω (typ.) at VCC = 9.0 V

  • CMOS low power dissipation

  • High noise immunity

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Complies with JEDEC standards:

    • JESD8C (2.7 V to 3.6 V)

    • JESD7A (2.0 V to 6.0 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

文档 (2)

文件名称 标题 类型 日期
74HC_HCT2G66 Dual single-pole single-throw analog switch Data sheet 2023-11-21
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册