双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74HCT3G34GD

Triple buffer gate

The 74HC3G34; 74HCT3G34 is a triple buffer. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.

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Features and benefits

  • Wide supply voltage range from 2.0 V to 6.0 V

  • Input levels:

    • For 74HC3G34: CMOS level

    • For 74HCT3G34: TTL level

  • CMOS low power dissipation

  • High noise immunity

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Complies with JEDEC standards

    • JESD8C (2.7 V to 3.6 V)

    • JESD7A (2.0 V to 6.0 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

文档 (2)

文件名称 标题 类型 日期
74HC_HCT3G34 Triple buffer gate Data sheet 2024-01-02
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册