双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LVC3G16GM

Triple buffer

The 74LVC3G16 provides three buffers.

The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of the 74LVC3G16 as a translator in a mixed 3.3 V and 5 V environment.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.

此产品已停产

Alternatives

Features and benefits

  • Wide supply voltage range from 1.65 V to 5.5 V

  • 5 V tolerant input/output for interfacing with 5 V logic

  • High noise immunity

  • ±24 mA output drive (VCC = 3.0 V)

  • CMOS low power consumption

  • Latch-up performance exceeds 250 mA

  • Direct interface with TTL levels

  • Complies with JEDEC standard:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8B/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74LVC3G16GM 74LVC3G16GMH
(935307608125)		 Obsolete no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74LVC3G16GM 74LVC3G16GMH 74LVC3G16GM rohs rhf rhf
品质及可靠性免责声明

Series

文档 (1)

文件名称 标题 类型 日期
lvc3g16 74LVC3G16 IBIS model IBIS model 2015-11-09

支持

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模型

文件名称 标题 类型 日期
lvc3g16 74LVC3G16 IBIS model IBIS model 2015-11-09

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册