双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BAS116T

Single low leakage current switching diode

Single low leakage current switching diode, encapsulated in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.

此产品已停产

Features and benefits

  • High switching speed: trr = 0.8 µs
  • Low leakage current: 3 pA
  • Repetitive peak reverse voltage: VRRM ≤ 85 V
  • AEC-Q101 qualified
  • Low capacitance: Cd = 2 pF
  • Reverse voltage: VR ≤ 75 V
  • Ultra small SMD plastic package

Applications

  • Low leakage current applications
  • General-purpose switching
  • Voltage clamping
  • Reverse polarity protection

参数类型

型号 Package version Package name Size (mm)
BAS116T SOT416 SC-75 1.6 x 0.75 x 0.9

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
BAS116T BAS116T,115
(934063959115)		 Obsolete SOT416
SC-75
(SOT416) 		SOT416 SOT416_115

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
BAS116T BAS116T,115 BAS116T rohs rhf rhf
品质及可靠性免责声明

文档 (5)

文件名称 标题 类型 日期
BAS116T Single low leakage current switching diode Data sheet 2012-07-10
AN90063 Questions about package outline drawings Application note 2025-03-12
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2025-01-31
BAS116T BAS116T SPICE model SPICE model 2025-03-28

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。


Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名称 标题 类型 日期
BAS116T BAS116T SPICE model SPICE model 2025-03-28

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册