双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BU508DF

Silicon diffused power transistor

Enhanced performance, new generation, high-voltage, high-speed switching NPN transistor with an integrated damper diode in a full isolated SOT199 envelope intended for use in horizontal deflection circuits of color television receivers.

此产品已停产

Features and benefits

  • Very low switching and conduction loss

Applications

  • CRT TV

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
BU508DF BU508DF,127
(933832560127)
Obsolete BU 508DF P**XXYY AZ no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
BU508DF BU508DF,127 BU508DF rohs rhf rhf
品质及可靠性免责声明

文档

No documents available

模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.