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Click here for more informationBUK9107-55ATE
N-channel TrenchPLUS logic level FET
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Features and benefits
- AEC-Q101 compliant
- Allows responsive temperature monitoring due to integrated temperature sensor
- Electrostatically robust due to integrated protection diodes
- Low conduction losses due to low on-state resistance
Applications
- 12 V and 24 V high power motor drives
- Automotive and general purpose power switching
- Electrical Power Assisted Steering (EPAS)
- Protected drive for lamps
参数类型
| 型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | Automotive qualified | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK9107-55ATE | SOT426 | D2PAK | End of life | N | 1 | 55 | 6.2 | 7 | 75 | 4.7 | 272 | Y | 2010-10-16 |
封装
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| BUK9107-55ATE | BUK9107-55ATE,118 (934056982118) |
Obsolete | BUK9107 55ATE P**XXYY AZ Batch no. | no package information | |||
环境信息
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BUK9107-55ATE | BUK9107-55ATE,118 | BUK9107-55ATE |
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文档 (12)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| BUK9107-55ATE | N-channel TrenchPLUS logic level FET | Data sheet | 2009-02-15 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
No documents available
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.