双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BUK9907-55ATE

N-channel TrenchPLUS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

此产品已停产

Features and benefits

  • AEC-Q101 compliant
  • Allows responsive temperature monitoring due to integrated temperature sensor
  • Electrostatically robust due to integrated protection diodes
  • Low conduction losses due to low on-state resistance

Applications

  • 12 V and 24 V high power motor drives
  • Automotive and general purpose power switching
  • Electrical Power Assisted Steering (EPAS)
  • Protected drive for lamps

参数类型

型号 Package version Package name Product status Channel type Nr of transistors Automotive qualified Release date
BUK9907-55ATE SOT263B TO-220-5 End of life N 1 Y 2010-10-18

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
BUK9907-55ATE BUK9907-55ATE,118
(934056981118)		 Obsolete BUK9907 55ATE P**XXYY AZ SOT263B
TO-220-5
(SOT263B) 		SOT263B 暂无信息
BUK9907-55ATE,127
(934056981127)		 Obsolete BUK9907 55ATE P**XXYY AZ 暂无信息

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
BUK9907-55ATE BUK9907-55ATE,118 BUK9907-55ATE    
BUK9907-55ATE BUK9907-55ATE,127 BUK9907-55ATE rohs rhf
品质及可靠性免责声明

文档 (14)

文件名称 标题 类型 日期
BUK9907-55ATE N-channel TrenchPLUS logic level FET Data sheet 2009-02-16
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT263B plastic, single-ended package (heatsink mounted, 1 mounting hole); 5 leads; 1.7 mm pitch; 15.5 mm x 10 mm x 4.3 mm body Package information 2020-04-21
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册