双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

CBT3257ADB

Quad 1-of-2 multiplexer/demultiplexer

The CBT3257A is a quad single-pole, dual-throw bus switch. The device features an output enable input (OE) and a select input (S). When OE is LOW the switch is enabled and the select input can be used to connect the nA terminals to either of the associated nB terminals.

此产品已停产

Alternatives

Features and benefits

  • 5 Ω switch connection between two ports

  • Minimal propagation delay through the switch

  • Direct interface with TTL levels

  • Overvoltage tolerant control inputs to 5.5 V

  • Latch-up protection exceeds 100 mA per JEDEC standard JESD78 class II level A

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
CBT3257ADB CBT3257ADB,112
(935275889112)		 Obsolete no package information
CBT3257ADB,118
(935275889118)		 Obsolete

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
CBT3257ADB CBT3257ADB,112 CBT3257ADB rohs rhf rhf
CBT3257ADB CBT3257ADB,118 CBT3257ADB rohs rhf rhf
品质及可靠性免责声明

Series

文档 (3)

文件名称 标题 类型 日期
CBT3257A Quad 1-of-2 multiplexer/demultiplexer Data sheet 2024-04-18
AN90010 Pin FMEA for CBT(D) family Application note 2019-10-28
cbt3257a CBT3257A IBIS model IBIS model 2019-06-13

支持

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模型

文件名称 标题 类型 日期
cbt3257a CBT3257A IBIS model IBIS model 2019-06-13

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册