可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| GAN111-650WSB | GAN111-650WSBQ | 934666222127 | SOT429-3 | 订单产品 |
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Click here for more informationGAN111-650WSB
650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package
The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Features and benefits
Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or +12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability
Applications
Hard and soft switching converters for industrial and datacom power
AC/DC Bridgeless totem-pole PFC
DC/DC High-frequency resonant converters
Datacom and telecom (AC/DC and DC/DC) converters
Solar (PV) inverters
Servo motor drives
TV PSU and LED drivers
参数类型
| 型号 | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN111-650WSB | SOT429-3 | TO-247-3L | Production | cascode | N | 1 | 650 | 114 | 175 | 21 | 0.8 | 4.9 | 107 | 65 | 4.1 | N | 336 | 49 | 2024-07-03 |
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| GAN111-650WSB | GAN111-650WSBQ (934666222127) |
Active | GAN111 650WSB |
TO-247-3L (SOT429-3) |
SOT429-3 | 暂无信息 |
文档 (2)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| GAN111-650WSB | 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package | Data sheet | 2024-06-24 |
| SOT429-3 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Package information | 2023-12-07 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
No documents available
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| GAN111-650WSB | GAN111-650WSBQ | 934666222127 | Active | 暂无信息 | 300 | 订单产品 |
样品
作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GAN111-650WSB
650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package
从安世半导体购买
| SKU | 库存* | MOQ | 单位价格 | 数量 |
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