双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

N74F367D

Hex buffer/driver

General description

此产品已停产

Features and benefits

  • High-impedance NPN base inputs for reduced loading (20 μA in HIGH and LOW states)
  • High-speed
  • Bus oriented
  • 3-State buffer outputs sink 64 mA

Applications

参数类型

型号 Package name
N74F367D SO16

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
N74F367D N74F367D,602
(933756800602)
Obsolete 74F367D Standard Procedure Standard Procedure SOT109-1
SO16
(SOT109-1)
SOT109-1 SO-SOJ-REFLOW
SO-SOJ-WAVE
WAVE_BG-BD-1
暂无信息
N74F367D,623
(933756800623)
Obsolete 74F367D Standard Procedure Standard Procedure 暂无信息
N74F367D/0001,118
(935210180118)
Obsolete SOT109-1_118

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
N74F367D N74F367D,602 N74F367D rohs rhf rhf
N74F367D N74F367D,623 N74F367D rohs rhf rhf
N74F367D N74F367D/0001,118 N74F367D    
品质及可靠性免责声明

文档 (8)

文件名称 标题 类型 日期
74F367 Hex buffer/driver Data sheet 2004-01-29
SOT109-1 3D model for products with SOT109-1 package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SO16_SOT109-1_mk plastic, small outline package; 16 leads; 1.27 mm pitch; 9.9 mm x 3.9 mm x 1.35 mm body Marcom graphics 2017-01-28
SOT109-1 plastic, small outline package; 16 leads; 1.27 mm pitch; 9.9 mm x 3.9 mm x 1.75 mm body Package information 2023-11-07
SO-SOJ-REFLOW Footprint for reflow soldering Reflow soldering 2009-10-08
SO-SOJ-WAVE Footprint for wave soldering Wave soldering 2009-10-08
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
SOT109-1 3D model for products with SOT109-1 package Design support 2020-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.