可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| NGW50T65H3DFP | NGW50T65H3DFPQ | 934668244127 | SOT429-2 | 订单产品 |
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Click here for more informationNGW50T65H3DFP
650 V, 50 A high speed trench field-stop IGBT with full rated silicon diode
The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
Features and benefits
Collector current (IC) rated at A
Low conduction and switching losses
Stable and tight parameters for easy parellel operation
Maximum junction temperature of 175 °C
Fully rated as a soft fast reverse recovery diode
RoHS compliant, lead-free plating
Applications
Power inverters
Uninterruptible Power Supply (UPS) inverter
Photovoltaic (PV) strings
EV charging
Induction heating
Welding
参数类型
| 型号 | Product status | VCE [max] (V) | IC [typ] (A) | Configuration | Tj [min] (°C) | Tj [max] (°C) | Package version | Package name |
|---|---|---|---|---|---|---|---|---|
| NGW50T65H3DFP | Production | 650 | 50 | HS | -40 | 175 | SOT429-2 | TO-247-3L |
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| NGW50T65H3DFP | NGW50T65H3DFPQ (934668244127) |
Active | 50T65H3DFP |
TO-247-3L (SOT429-2) |
SOT429-2 | SOT429-2_127 |
文档 (5)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| NGW50T65H3DFP | 650 V, 50 A high speed trench field-stop IGBT with full rated silicon diode | Data sheet | 2024-06-28 |
| SOT429-2 | SOT429-2.step | Design support | 2024-11-22 |
| SOT429-2_TO-247-TL | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Marcom graphics | 2023-11-15 |
| SOT429-2 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Package information | 2022-02-10 |
| SOT429-2_127 | TO-247-3L; Tube pack; Standard product orientation | Packing information | 2023-04-03 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| SOT429-2 | SOT429-2.step | Design support | 2024-11-22 |
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| NGW50T65H3DFP | NGW50T65H3DFPQ | 934668244127 | Active | SOT429-2_127 | 450 | 订单产品 |
样品
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如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
NGW50T65H3DFP
650 V, 50 A high speed trench field-stop IGBT with full rated silicon diode
从安世半导体购买
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