可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| NGW75T65H3DF | NGW75T65H3DFQ | 934665504127 | SOT429-2 | 订单产品 |
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Click here for more informationNGW75T65H3DF
650 V ,75 A high speed trench field-stop IGBT with full rated silicon diode
The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 75 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
Features and benefits
Collector current (IC) rated at 75 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature of 175 °C
Fully rated as a soft fast reverse recovery diode
RoHS compliant, lead-free plating
Applications
Power inverters
Uninterruptible Power Supply (UPS) inverter
Photovoltaic (PV) strings
EV charging
Induction heating
Welding
参数类型
| 型号 | Product status | VCE [max] (V) | IC [typ] (A) | Configuration | Tj [min] (°C) | Tj [max] (°C) | Package version | Package name |
|---|---|---|---|---|---|---|---|---|
| NGW75T65H3DF | Production | 650 | 75 | HS | -40 | 175 | SOT429-2 | TO-247-3L |
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| NGW75T65H3DF | NGW75T65H3DFQ (934665504127) |
Active | 75T65H3DF |
TO-247-3L (SOT429-2) |
SOT429-2 | SOT429-2_127 |
文档 (6)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| NGW75T65H3DF | 650 V ,75 A high speed trench field-stop IGBT with full rated silicon diode | Data sheet | 2024-06-28 |
| nexperia_igbt_flyer_lr_202304 | 600/650 V IGBTs for industrial applications | Leaflet | 2023-07-03 |
| nexperia_igbt_flyer_lr_CHN_202304 | 600/650 V IGBTs 适用于工业应用 | Leaflet | 2023-07-03 |
| SOT429-2_TO-247-TL | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Marcom graphics | 2023-11-15 |
| SOT429-2 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Package information | 2022-02-10 |
| SOT429-2_127 | TO-247-3L; Tube pack; Standard product orientation | Packing information | 2023-04-03 |
支持
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模型
No documents available
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| NGW75T65H3DF | NGW75T65H3DFQ | 934665504127 | Active | SOT429-2_127 | 450 | 订单产品 |
样品
作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
NGW75T65H3DF
650 V ,75 A high speed trench field-stop IGBT with full rated silicon diode
从安世半导体购买
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