双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NPIC6C596D

Power logic 8-bit shift register; open-drain outputs

The NPIC6C596 is an 8-bit serial-in/serial or parallel-out shift register with a storage register and open-drain outputs. Both the shift and storage register have separate clocks. The device features a serial input (DS) and a serial output (Q7S) to enable cascading and an asynchronous reset MR input. A LOW on MR resets both the shift register and storage register. Data is shifted on the LOW-to-HIGH transitions of the SHCP input. The data in the shift register is transferred to the storage register on a LOW-to-HIGH transition of the STCP input. If both clocks are connected together, the shift register is always one clock pulse ahead of the storage register. To provide additional hold time in cascaded applications, the serial output QS7 is clocked out on the falling edge of SHCP. Data in the storage register drives the gate of the output extended-drain NMOS (EDNMOS) transistor whenever the output enable input (OE) is LOW. A HIGH on OE causes the outputs to assume a high-impedance OFF-state. Operation of the OE input does not affect the state of the registers.

The open-drain outputs are 33 V/100 mA continuous current extended-drain NMOS transistors designed for use in systems that require moderate load power such as LEDs. Integrated voltage clamps in the outputs provide protection against inductive transients making the device suitable for power driver applications such as relays, solenoids and other low-current or medium-voltage loads.

此产品已停产

Features and benefits

  • Specified from -40 °C to +125 °C

  • Low RDSon

  • Eight Power EDNMOS transistor outputs of 100 mA continuous current

  • 250 mA current limit capability

  • Output clamping voltage 33 V

  • 30 mJ avalanche energy capability

  • Enhanced cascading for multiple stages

  • All registers cleared with single input

  • Low power consumption

  • ESD protection:

    • HBM JDS-001 Class 2 exceeds 2500 V

    • CDM JESD22-C101E exceeds 1000 V

Applications

  • LED sign

  • Graphic status panel

  • Fault status indicator

参数类型

型号 Package name
NPIC6C596D SO16

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
NPIC6C596D NPIC6C596D,118
(935297273118)
Discontinued / End-of-life NPIC6C596D SOT109-1
SO16
(SOT109-1)
SOT109-1 SO-SOJ-REFLOW
SO-SOJ-WAVE
WAVE_BG-BD-1
SOT109-1_118

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
NPIC6C596D NPIC6C596D,118 NPIC6C596D rohs rhf rhf
品质及可靠性免责声明

文档 (12)

文件名称 标题 类型 日期
NPIC6C596 Power logic 8-bit shift register; open-drain outputs Data sheet 2020-06-22
AN11537 Pin FMEA for NPIC Family Application note 2019-10-07
SOT109-1 3D model for products with SOT109-1 package Design support 2020-01-22
npic6c596 NPIC6C596 IBIS model IBIS model 2016-05-30
Nexperia_document_leaflet_Logic_NPIC_ShiftRegisters_201906 NPIC Logic Shift Registers Leaflet 2019-07-12
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SO16_SOT109-1_mk plastic, small outline package; 16 leads; 1.27 mm pitch; 9.9 mm x 3.9 mm x 1.35 mm body Marcom graphics 2017-01-28
SOT109-1 plastic, small outline package; 16 leads; 1.27 mm pitch; 9.9 mm x 3.9 mm x 1.75 mm body Package information 2023-11-07
NPIC6C596D_Nexperia_Product_Reliability NPIC6C596D Nexperia Product Reliability Quality document 2022-05-04
SO-SOJ-REFLOW Footprint for reflow soldering Reflow soldering 2009-10-08
SO-SOJ-WAVE Footprint for wave soldering Wave soldering 2009-10-08
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

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模型

文件名称 标题 类型 日期
npic6c596 NPIC6C596 IBIS model IBIS model 2016-05-30
SOT109-1 3D model for products with SOT109-1 package Design support 2020-01-22

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.