双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PBSS3540E

40 V, 500 mA PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.

NPN complement: PBSS2540E.

此产品已停产

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability: IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
  • AEC-Q101 qualified

Applications

  • DC-to-DC conversion
  • MOSFET gate driving
  • Motor control
  • Charging circuits
  • Low power switches (e.g. motors, fans)

参数类型

型号 Package version Package name Size (mm) channel type (e) Ptot (mW) VCEO [max] (V) IC [max] (mA) hFE [min] fT [min] (MHz)
PBSS3540E SOT416 SC-75 1.6 x 0.75 x 0.9 PNP 150.0 -40.0 -500.0 200.0 100.0

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PBSS3540E PBSS3540E,115
(934059171115)		 Obsolete SOT416
SC-75
(SOT416) 		SOT416 SOT416_115

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PBSS3540E PBSS3540E,115 PBSS3540E rohs rhf rhf
品质及可靠性免责声明

文档 (5)

文件名称 标题 类型 日期
PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor Data sheet 2010-01-18
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note 2021-06-23
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
PBSS3540E PBSS3540E SPICE model SPICE model 2024-08-27

支持

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模型

文件名称 标题 类型 日期
PBSS3540E PBSS3540E SPICE model SPICE model 2024-08-27

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册