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Click here for more informationPBSS5140V
40 V low VCEsat PNP transistor
PNP low VCE sat transistor in a SOT666 plastic package.
NPN complement: PBSS4140V.
Features and benefits
- 300 mW total power dissipation
- Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package
- Improved thermal behaviour due to flat leads
- Self alignment during soldering due to straight leads
- Low collector-emitter saturation voltage
- High current capability
- AEC-Q101 qualified
Applications
- General purpose switching and muting
- LCD back lighting
- Supply line switching circuits
- Battery driven equipment (mobile phones, video cameras and hand-held devices).
参数类型
型号 | Package version | Package name | Size (mm) | channel type (e) | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | hFE [max] | fT [min] (MHz) |
---|---|---|---|---|---|---|---|---|---|---|
PBSS5140V | SOT666 | SOT666 | 1.6 x 1.2 x 0.55 | PNP | 300.0 | -40.0 | -1000.0 | 300.0 | 800.0 | 150.0 |
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PBSS5140V | PBSS5140V,115 (934056817115) |
Obsolete |
(SOT666) |
SOT666 |
REFLOW_BG-BD-1
|
SOT666_115 | |
PBSS5140V,315 (934056817315) |
Obsolete | SOT666_315 |
文档 (8)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PBSS5140V | 40 V low VCEsat PNP transistor | Data sheet | 2002-03-19 |
AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
SOT666 | 3D model for products with SOT666 package | Design support | 2019-01-22 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT666_mk | plastic, surface-mounted package; 6 leads; 1 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Marcom graphics | 2017-01-28 |
SOT666 | plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Package information | 2022-06-01 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PBSS5140V | PBSS5140V SPICE model | SPICE model | 2024-08-27 |
支持
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.