双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PDTA114EE

PNP resistor-equipped transistors; R1 = 10 kΩ; R2 = 10 kΩ

PNP Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages.

此产品已停产

Features and benefits

  • 100 mA output current capability
  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs
  • AEC-Q101 qualified

Applications

  • Digital application in automotive and industrial segments
  • Control of IC inputs
  • Cost-saving alternative for BC847/857 series in digital applications
  • Switching loads

参数类型

型号 Package version Package name Size (mm)
PDTA114EE SOT416 SC-75 1.6 x 0.75 x 0.9

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PDTA114EE PDTA114EE,115
(934051530115)		 Obsolete SOT416
SC-75
(SOT416) 		SOT416 SOT416_115
PDTA114EEAF
(934051530135)		 Obsolete SOT416_135
PDTA114EE/A2,115
(934063174115)		 Obsolete SOT416_115

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PDTA114EE PDTA114EE,115 PDTA114EE rohs rhf rhf
PDTA114EE PDTA114EEAF PDTA114EE rohs rhf rhf
PDTA114EE PDTA114EE/A2,115 PDTA114EE rohs rhf rhf
品质及可靠性免责声明

文档 (4)

文件名称 标题 类型 日期
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LSYMTRA Letter Symbols - Transistors; General Other type 1999-05-06
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
PDTA114EE PDTA114EE SPICE model SPICE model 2024-08-27

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PDTA114EE PDTA114EE SPICE model SPICE model 2024-08-27

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册