双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PESD4USB3BCTBR-Q

Extremely low capacitance bidirectional ESD protection diode array

This bidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial Link (GMSL) Serializer/Deserializer (SerDes) against Electrostatic Discharge (ESD).

The device is encapsulated in a leadless small DFN2510A-10 (SOT1176-2) plastic package and provides ESD protection up to 15 kV exceeding IEC 61000-4-2 level 4 and fulfilling ISO 10605.

Features and benefits

  • Bidirectional ESD protection for four signal lines

  • VRWM = 3.3 V device

  • Extremely low clamping voltage to protect sensitive I/Os

  • Extremely low clamping voltage: 5.4 V for 6.5 A 8/20 µs surge

  • IEC 61000-4-4 robust up to 40 A into a 50 Ohm termination (2 kV)

  • IEC 61000-4-5 (surge): IPP = 8.2 A peak pulse (average measured)

  • Typical line capacitance of only 0.19 pF

  • ESD protection up to ±15 kV according to IEC 61000-4-2

  • Leadless ultra small DFN2510A-10 (SOT1176-2) surface mount package

  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Infotainment applications: USB 2.0, USB 3.2 and HDMI 2.1

  • Automotive A/V monitors, display and cameras

  • SerDes: GMSL, APIX, FPD-Link and LVDS

参数类型

型号 Package version Package name Size (mm) Configuration Nr of lines VRWM (V) (V) Cd [typ] (pF) IPPM [max] (A) VESD (kV) (kV)
PESD4USB3BCTBR-Q SOT1176-2 DFN2510A-10 1.0 x 2.5 x 0.5 Bidirectional 4 3.3 0.19 6.5 15

封装

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
PESD4USB3BCTBR-Q PESD4USB3BCTBR-QZ
(934665070471)
Active Q9 SOT1176-2
DFN2510A-10
(SOT1176-2)
SOT1176-2 暂无信息

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PESD4USB3BCTBR-Q PESD4USB3BCTBR-QZ PESD4USB3BCTBR-Q rohs rhf rhf
品质及可靠性免责声明

文档 (4)

文件名称 标题 类型 日期
PESD4USB3BCTBR-Q Extremely low capacitance bidirectional ESD protection diode array Data sheet 2023-11-09
SOT1176-2 3D model for products with SOT1176-2 package Design support 2023-02-07
SOT1176-2 plastic, extremely thin small outline package; no leads; 10 terminals; body 1.0 x 2.5 x 0.5 mm Package information 2021-09-08
PESD4USB3BCTBR-Q_Nexperia_Product_Reliability PESD4USB3BCTBR-Q Nexperia Product Reliability Quality document 2024-04-29

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
SOT1176-2 3D model for products with SOT1176-2 package Design support 2023-02-07

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
PESD4USB3BCTBR-Q PESD4USB3BCTBR-QZ 934665070471 Active 暂无信息 5,000 订单产品

样品

作为 Nexperia 的客户,您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户,我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PESD4USB3BCTBR-Q PESD4USB3BCTBR-QZ 934665070471 SOT1176-2 订单产品