可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| PHT6NQ10T | PHT6NQ10T,135 | 934055876135 | SOT223 | 订单产品 |
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N-channel TrenchMOS standard level FET
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
不建议用在新设计中(NRND)。
Features and benefits
Higher operating power due to low thermal resistance
Low conduction losses due to low on-state resistance
Suitable for high frequency applications due to fast switching characteristics
Applications
DC-to-DC convertors
Motor and relay drivers
参数类型
| 型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PHT6NQ10T
|
SOT223 | SC-73 | Not for design in | N | 1 | 100 | 20 | 90 | 150 | 6.5 | 8.2 | 21 | 1.8 | 135 | 3 | N | 633 | 103 | 2011-01-24 |
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
|
PHT6NQ10T
|
PHT6NQ10T,135 (934055876135) |
Active | 6NQ10T |
SC-73 (SOT223) |
SOT223 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT223_135 |
文档 (20)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PHT6NQ10T | N-channel TrenchMOS (tm) transistor | Data sheet | 1999-07-31 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| SOT223 | 3D model for products with SOT223 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SC-73_SOT223_mk | plastic, surface-mounted package with increased heatsink; 4 leads; 4.6 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body | Marcom graphics | 2017-01-28 |
| SOT223 | plastic, surface-mounted package with increased heatsink; 4 leads; 2.3 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body | Package information | 2022-05-30 |
| SOT223_135 | SC-73; Reel pack for SMD, 13"; Q3/T4 product orientation | Packing information | 2024-02-15 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PHT6NQ10T | PHT6NQ10T SPICE model | SPICE model | 2012-06-08 |
| PHT6NQ10T_16_03_2012 | PHT6NQ10T.16_03_2012 Spice parameter | SPICE model | 2012-04-16 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PHT6NQ10T | PHT6NQ10T SPICE model | SPICE model | 2012-06-08 |
| PHT6NQ10T_16_03_2012 | PHT6NQ10T.16_03_2012 Spice parameter | SPICE model | 2012-04-16 |
| SOT223 | 3D model for products with SOT223 package | Design support | 2019-01-22 |
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| PHT6NQ10T | PHT6NQ10T,135 | 934055876135 | Active | SOT223_135 | 4,000 | 订单产品 |
样品
作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PHT6NQ10T
N-channel TrenchMOS standard level FET
从安世半导体购买
| SKU | 库存* | MOQ | 单位价格 | 数量 |
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