可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
PMGD780SN | PMGD780SN,115 | 934057709115 | SOT363 | 订单产品 |
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Click here for more informationDual N-channel TrenchMOS standard level FET
Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
Dual device
Fast switching
Footprint 40 % smaller than SOT23
Low on-state resistance
Standard level threshold voltage
Surface-mounted package
Driver circuits
Switching in portable appliances
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMGD780SN
|
SOT363 | TSSOP6 | Not for design in | N | 2 | 60 | 20 | 920 | 1400 | 150 | 0.49 | 0.22 | 1.05 | 0.41 | 2 | N | 23 | 5 | 2011-01-24 |
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PMGD780SN
|
PMGD780SN,115 (934057709115) |
Active | D7% |
TSSOP6 (SOT363) |
SOT363 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT363_115 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PMGD780SN | Dual N-channel uTrenchMOS standard level FET | Data sheet | 2010-04-28 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
AN90032 | Low temperature soldering, application study | Application note | 2022-02-22 |
Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
SOT363 | 3D model for products with SOT363 package | Design support | 2018-12-05 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
TSSOP6_SOT363_mk | plastic, surface-mounted package; 6 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body | Marcom graphics | 2017-01-28 |
SOT363 | plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body | Package information | 2022-06-01 |
SOT363_115 | TSSOP6; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-06-12 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PMGD780SN_16_04_2012 | PMGD780SN Spice model | SPICE model | 2013-12-13 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
MAR_SOT363 | MAR_SOT363 Topmark | Top marking | 2013-06-03 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PMGD780SN_16_04_2012 | PMGD780SN Spice model | SPICE model | 2013-12-13 |
SOT363 | 3D model for products with SOT363 package | Design support | 2018-12-05 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
PMGD780SN | PMGD780SN,115 | 934057709115 | Active | SOT363_115 | 3,000 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.