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Click here for more informationPRTR5V0U6AS
High speed interface ESD protection to IEC 61000-4-2 level 4
The PRTR5V0U6AS is designed to protect Input/Output (I/O) ports that are sensitive to capacitive load, such as USB 2.0, Ethernet, DVI and HDMI from destruction by ElectroStatic Discharge (ESD). It provides protection to downstream signal and supply components from ESD voltages as high as +-8 kV (contact discharge).
The PRTR5V0U6AS incorporates six pairs of ultra-low capacitance rail-to-rail diodes plus a Zener diode. The rail-to-rail diodes are connected to the Zener diode which allows ESD protection to be independent of supply voltage with any ESD voltage discharged locally within the device. The PRTR5V0U6AS is fabricated using monolithic silicon technology integrating six ultra-low capacitance rail-to-rail ESD protection diodes in a miniature 8-lead SO8 (SOT96) package.
Features and benefits
- Pb-free and RoHS compliant, dark green
- ESD protection compliant to IEC 61000-4-2 level 4, +-8 kV contact discharge
- Six ultra-low input capacitance (1 pF typical) ESD rail-to-rail ESD protection diodes
- Supply voltage independent clamping due to integrated Zener diode
- Small 8-lead SO8 (SOT96) package
Applications
- General-purpose downstream ESD protection high frequency analog signals and high-speed serial data transmission for ports inside:
- Cellular and PCS mobile handsets
- PC/Notebook USB2.0/IEEE1394 ports
- DVI/HDMI interfaces
- Cordless telephones
- Wireless data (WAN/LAN) systems
- PDAs
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PRTR5V0U6AS | PRTR5V0U6AS,118 (934058882118) |
Obsolete | no package information |
文档 (1)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PRTR5V0U6AS | High speed interface ESD protection to IEC 61000-4-2 level 4 | Data sheet | 2008-02-17 |
支持
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模型
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.