双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN1R1-50SLH

N-channel 50 V, 1.18 mOhm, 280 A logic level MOSFET in LFPAK88 using NextPower-S3 Schottky-Plus technology

280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance industrial applications.

此产品已停产

Features and benefits

  • 280 Amp continuous current capability

  • LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection

  • Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating

  • Ideal replacement for D2PAK and 10 x 12 mm leadless package types

  • Qualified to 175 °C

  • Avalanche rated, 100 % tested

  • Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies

  • Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs

  • Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage

  • Narrow VGS(th) rating for easy paralleling and improved current sharing

  • Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions

Applications

  • Brushless DC motor control

  • Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies

  • Battery protection and Battery Management Systems (BMS)

  • Load switch

  • 10 cell lithium-ion battery applications (36 V ‒ 42 V)

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN1R1-50SLH SOT1235 LFPAK88 End of life N 1 50 1.18 175 280 20 86 190 375 1.78 N 13338 1276 2021-01-08

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PSMN1R1-50SLH PSMN1R1-50SLHX
(934661301115)		 Obsolete X1H1L50S SOT1235
LFPAK88
(SOT1235) 		SOT1235 REFLOW_BG-BD-1
暂无信息
PSMN1R1-50SLHAX
(934661301118)		 Obsolete X1H1L50S SOT1235_118

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PSMN1R1-50SLH PSMN1R1-50SLHX PSMN1R1-50SLH rohs rhf
PSMN1R1-50SLH PSMN1R1-50SLHAX PSMN1R1-50SLH rohs rhf
品质及可靠性免责声明

Series

文档 (8)

文件名称 标题 类型 日期
PSMN1R1-50SLH N-channel 50 V, 1.18 mOhm, 280 A logic level MOSFET in LFPAK88 using NextPower-S3 Schottky-Plus technology Data sheet 2021-01-08
AN90003 LFPAK MOSFET thermal design guide Application note 2023-08-22
SOT1235 3D model for products with SOT1235 package Design support 2020-01-22
SOT1235 3D model for products with SOT1235 package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK88_sot1235_mk plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body Marcom graphics 2019-04-10
SOT1235 plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body Package information 2022-05-30
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
SOT1235 3D model for products with SOT1235 package Design support 2020-01-22
SOT1235 3D model for products with SOT1235 package Design support 2020-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册